Integrated circuit system with through silicon via and method of manufacture thereof
View Patent ↗A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
1. An integrated circuit (IC) device comprising:
a substrate including an active component;
a passivation layer being disposed over the substrate and the active component;
a through-silicon-via (TSV) contact for facilitating stacking of IC devices, wherein the TSV contact comprises a top surface and a continuous depth which extends from a top side of the IC device through the passivation layer and into the substrate; and
a device contact which comprises a top surface and a depth to the active device, wherein the top surfaces of the TSV and device contacts are exposed.
2. The device of claim 1 wherein the TSV contact passes through an isolation structure in the substrate.
3. The device of claim 1 wherein the TSV contact and the device contact comprise different material.
4. The device of claim 1 wherein the top surfaces of the TSV and device contacts are coplanar with each other.
5. The device of claim 1 wherein the device contact passes through the passivation layer.
6. The device of claim 1 wherein the TSV contact and the contact are physically separated from each other.
7. The device of claim 2
wherein the substrate has a thickness T s , the substrate includes a TSV region in the substrate, the TSV region has a first material different from the substrate, the TSV region has a TSV depth D TSV which is less than T s ; and
comprises a via in the substrate through the TSV region, wherein the via has a via depth D v which is greater than D TSV and less than T s and the TSV contact is in the via.
8. The device of claim 2 comprising a trench in the substrate filled with a first material different from the substrate, and wherein the TSV contact is disposed in the substrate through the trench.