Semiconductor devices
View Patent ↗Semiconductor devices include a substrate, a first gate structure and a second gate structure positioned on the substrate, and a first source/drain formed in the substrate respectively at two sides of the first gate structure and a second source/drain formed in the substrate respectively at two sides of the second gate structure. The first gate structure and the second gate structure include a same conductivity type. The first source/drain and the second source/drain are different.
1. Semiconductor devices comprising:
a substrate;
a first gate structure and a second gate structure positioned on the substrate, the first gate structure and the second gate structure comprising a same conductivity type; and
a first source/drain formed in the substrate respectively at two sides of the first gate structure and a second source/drain formed in the substrate respectively at two sides of the second gate structure, the first source/drain and the second source/drain comprises a first epitaxial structure and the second source/drain comprises a second epitaxial structure, the first epitaxial structure comprises a diamond shape and the second epitaxial structure comprise a shape different from the diamond shape, wherein the first epitaxial structure comprises a first epitaxy concentration, the second epitaxial structure comprises a second epitaxy concentration, and the first epitaxy concentration is higher than the second epitaxy concentration; and
an updoped epitaxial layer respectively formed on a top of the first epitaxial Structure and on a top of the second epitaxial structure.
2. The semiconductor devices according to claim 1 , wherein the first gate structure and the first source/drain form a first metal-oxide-semiconductor (MOS) transistor device, and the second gate structure and the second source/drain form a second MOS transistor device.
3. The semiconductor devices according to claim 2 , wherein the first MOS transistor device and the second MOS transistor device are strained-silicon transistor devices.
4. The semiconductor devices according to claim 3 , wherein the first source/drain is a strained-silicon structure of the first MOS transistor device, the second source/drain is a strained-silicon structure of the second MOS transistor device, respectively, and the first source/drain and the second source/drain provide different magnitudes of stresses.
5. The semiconductor devices according to claim 4 , further comprising a first recess formed in the substrate respectively at two sides of the first gate structure and a second recess formed n the substrate respectively at two sides of the second gate structure.
6. The semiconductor devices according to claim 5 , wherein the first source/drain is positioned in the first recess and the second source/drain is positioned in the second recess, respectively.
7. The semiconductor devices according to claim 6 , wherein the first recess and the second recess comprise different shapes.
8. The semiconductor devices according to claim 6 , wherein the first recess and the second recess comprise different depths.
9. The semiconductor devices according to claim 1 , wherein the first epitaxy concentration is higher than 30% and the second epitaxy concentration is lower than 30%.
10. The semiconductor devices according to claim 9 , wherein the first epitaxy concentration is higher than 45% and the second epitaxy concentration is lower than 25%.
11. The semiconductor devices according to claim 4 , further comprising a first fin structure and a second fin structure positioned on the substrate.
12. The semiconductor devices according to claim 11 , wherein the first gate structure covers a portion of the first fin structure and the second gate structure covers a portion of the second fin structure.
13. The semiconductor devices according to claim 11 , wherein the first source/drain is formed in the first fin structure and the second source/drain is formed in the second fin structure.