Wafer processing deposition shielding components
Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
1. A deposition ring for encircling a peripheral wall of a substrate support in a processing chamber, comprising:
an annular band for surrounding the peripheral wall of the substrate support, the annular band comprising:
an inner lip which extends transversely from the annular band and is substantially parallel to the peripheral wall of the substrate support, wherein the inner lip defines an inner perimeter of the deposition ring which surrounds a periphery of the substrate and substrate support to protect regions of the substrate support that are not covered by the substrate during processing to reduce or even entirely preclude deposition of sputtering deposits on the peripheral wall; and
a single annular V-shaped protuberance that extends along a central portion of the annular band with a first annular single recess that is radially inward and adjacent to the inner lip and a second annular single recess that is radially outward of the V-shaped protuberance, wherein the first and second annular single recesses are concentric with each other, wherein the first annular single recess is located in a horizontal plane below a horizontal plane of the second annular single recess, and wherein the first and second annular recesses are substantially planar.
2. The deposition ring of claim 1 , wherein opposing surfaces of the V-shaped protuberance form an angle between about 25° and about 30°.
3. The deposition ring of claim 1 , wherein the first annular single recess and the second annular single recess are substantially parallel to a bottom surface of the deposition ring.
4. The deposition ring of claim 1 , further comprising a ledge extending outward from the V-shaped protuberance.
5. The deposition ring of claim 1 , wherein a bottom surface of the annular band has a notch which extends under the V-shaped protuberance and the inner lip, wherein the notch has a width between about 0.6 inches and about 0.75 inches and a height between about 0.020 inches and 0.030 inches.
6. The deposition ring of claim 1 , wherein the second annular single recess has an outer diameter between about 13 inches and about 13.5 inches and an inner diameter between about 12 inches and about 12.5 inches, wherein an apex of the V-shaped protuberance has a diameter between about 12 inches and about 12.3 inches, and wherein the inner lip has an outer diameter between about 11 inches and about 12 inches.