Semiconductor devices and methods of manufacturing the same
A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.
1. A memory device, comprising:
a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate;
a selection element on the lower interconnection; and
a memory element on the selection element, wherein a surface of the selection element facing the lower interconnection is nonplanar.
2. The memory device as claimed in claim 1 , wherein the lower interconnection includes a metallic material.
3. The memory device as claimed in claim 1 , wherein the surface of the selection element facing the lower interconnection is sloped.
4. The memory device as claimed in claim 1 , wherein the lower interconnection is in direct contact with an entirety of the surface of the selection element facing the lower interconnection.
5. The memory device as claimed in claim 1 , wherein the memory elements employ variable resistors.
6. The memory device as claimed in claim 1 , wherein the selection element is a diode.
7. The memory device as claimed in claim 6 , wherein the diode is a PN diode.
8. The memory device as claimed in claim 1 , wherein the selection element includes a semiconductor pillar.
9. The memory device as claimed in claim 8 , wherein the semiconductor pillar includes an upper impurity region of a first conductivity type and a lower impurity region of a second conductivity type.
10. The memory device as claimed in claim 8 , wherein the semiconductor substrate includes a first region having the memory elements and a second region, wherein top surfaces of the semiconductor pillars are coplanar with a top surface of the semiconductor substrate of the second region.
11. A memory device, comprising:
a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate;
a selection element on the lower interconnection, the selection element including a semiconductor pillar; and
a memory element on the selection element, wherein the semiconductor pillar includes an upper impurity region of a first conductivity type and a lower impurity region of a second conductivity type, the lower impurity region including a heavily doped impurity region and a lightly doped impurity region between the heavily doped impurity region and the upper impurity region.
12. The memory device as claimed in claim 11 , wherein the lower interconnection includes a metallic material.
13. The memory device as claimed in claim 12 , wherein the heavily doped impurity region of the semiconductor pillar is in direct contact with the lower interconnection.
14. A memory device, comprising:
a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate;
a selection element on the lower interconnection; and
a memory element on the selection element, wherein the lower interconnections includes a first portion contacting the selection element and second portions between adjacent first portions, a thickness of the first portion being different from that of at least part of the second portions.
15. The memory device as claimed in claim 14 , wherein the selection element includes a semiconductor pillar and the second portions extend from the first portion.
16. The memory device as claimed in claim 15 , wherein the at least part of the second portion is thicker than the first portion.
17. The memory device as claimed in claim 15 , further comprising insulating sidewall spacers on sidewalls of the semiconductor pillars, wherein at least part of the second portion extends upwardly between adjacent sidewall spacers.
18. The memory device as claimed in claim 14 , wherein the at least part of the second portion is thicker than the first portion.
19. The memory device as claimed in claim 18 , wherein the at least part of the second portion includes a void.
20. The memory device as claimed in claim 19 , further comprising another conductive material filling the void.
21. The memory device as claimed in claim 14 , wherein a bottom surface of the second portion is triangular.
22. The memory device as claimed in claim 14 , wherein top and bottom surfaces of the second portion are rounded.
23. The memory device as claimed in claim 14 , wherein top and bottom surfaces of the second portion are sloped with a central flat portion.