Memory cells having-multi-portion data storage region
Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.
1. A memory cell, comprising:
a data storage region between a pair of conductive structures; the data storage region being configured to support a transitory structure which alters resistance through the memory cell, the transitory structure being a filament; and
wherein the data storage region comprises two or more portions; with one of the portions supporting a higher resistance segment of said transitory structure and another of the portions supporting a lower resistance segment of said transitory structure.
2. The memory cell of claim 1 wherein the data storage region comprises a thickness from a surface of the first conductive structure to a surface of the second conductive structure; and wherein the data storage region comprises one or more metal oxides entirely across said thickness.
3. The memory cell of claim 2 wherein the thickness is from about 5 to about 20 nm, and wherein the portion supporting the lower resistance segment has a thickness of less than or equal to about 4 nm.
4. The memory cell of claim 2 wherein the lower resistance segment is not directly against either of said surfaces.
5. The memory cell of claim 2 wherein the lower resistance segment is directly against one of said surfaces.
6. The memory cell of claim 2 wherein a first lower resistance segment is directly against one of said surfaces, and wherein a second lower resistance segment is directly against the other of said surfaces.
7. The memory cell of claim 6 wherein the first and second lower resistance segments have about the same resistance as one another.
8. The memory cell of claim 6 wherein the first and second lower resistance segments do not have about the same resistance as one another.
9. The memory cell of claim 2 wherein a first higher resistance segment is directly against one of said surfaces, and wherein a second higher resistance segment is directly against the other of said surfaces.
10. The memory cell of claim 9 wherein the first and second higher resistance segments have about the same resistance as one another.
11. The memory cell of claim 9 wherein the first and second higher resistance segments do not have about the same resistance as one another.
12. The memory cell of claim 1 wherein two or more of the portions differ from one another in concentration of one or more dopants.
13. The memory cell of claim 12 wherein;
the data storage region comprises metal oxide; and
the portion supporting the higher resistance segment comprises a dopant concentration within a range of from about 0.5 atomic percent to about 50 atomic percent; the dopant containing one or more elements other than oxygen selected from the group consisting of group 16 of the periodic table.
14. The memory cell of claim 1 wherein two or more of the portions differ from one another in density.
15. The memory cell of claim 1 wherein two or more of the portions differ from one another in crystallinity.