Apparatuses and methods including memory access in cross point memory
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
1. An apparatus comprising:
a memory cell;
first and second conductive lines configured to access the memory cell, the memory cell being coupled between the first and second conductive lines; and
a switch coupled between an additional conductive line and one of the first and second conductive lines, such that the switch is not coupled in series between the first and second conductive lines, and the switch configured to apply a signal to one of the first and second conductive lines, wherein the switch includes a variable resistance material.
2. The apparatus of claim 1 , wherein the memory cell includes a non-volatile memory cell.
3. The apparatus of claim 1 , wherein the memory cell includes a storage element and an access component coupled to the storage element, such that the storage element and the access component are coupled in series between the first and second conductive lines.
4. The apparatus of claim 1 , wherein the memory cell includes a storage element having a phase change material.
5. The apparatus of claim 4 , wherein the memory cell includes an access component coupled to the storage element, and the access component includes a phase change material.
6. The apparatus of claim 1 , wherein the variable resistance material includes a phase change material.
7. The apparatus of claim 1 , wherein the switch is configured to include a threshold voltage, and the switch is configured to be in a conductive state to couple the first conducive line to a third conductive line based on at least in part a voltage difference between a voltage on the third conductive line and a voltage on the first conductive line.
8. An apparatus comprising:
a memory cell;
first and second conductive lines configured to access the memory cell;
a switch configured to apply a signal to one of the first and second conductive lines, wherein the switch includes a variable resistance material; and
an additional switch, the additional switch including a phase change material, wherein the switch is configured to apply the signal to the first conductive line, the additional switch is configured to apply an additional signal to the second conductive line, and the additional switch is not coupled in series between the first and second conductive lines.
9. An apparatus comprising:
a memory cell;
first and second conductive lines configured to access the memory cell; and
a switch configured to apply a signal to one of the first and second conductive lines, wherein the switch includes a variable resistance material, wherein the memory cell is included in memory cells of a memory array, the first conductive line is included in a first plurality of conductive lines, the second conductive line is included in a second plurality of conductive lines, the first plurality of conductive lines and the second plurality of conductive lines configured to access the memory cells, and the switch is included in a plurality of switches, each switch in the plurality of switches including a phase change material and being coupled between an additional conductive line and a conductive line of the first plurality of conductive lines, such that each switch in the plurality of switches is not coupled in series between one conductive line of the first plurality of conductive lines and one conductive line of the second plurality of conductive lines.
10. The apparatus of claim 9 , wherein each switch of the plurality of switches is configured to operate as an ovonic threshold switch.
11. The apparatus of claim 9 , wherein each of the memory cells includes a phase change material configured to store information.
12. The apparatus of claim 11 , wherein each of the memory cells includes an additional phase change material configured to operate as an access component to provide access to the phase change material.
13. The apparatus of claim 9 , wherein the memory cells are arranged in rows of memory cells and columns of memory cells, the first plurality of conductive lines include column access lines associated with the columns of memory cells, and the second plurality of conductive lines include row access lines associated with the rows of memory cells.
14. The apparatus of claim 9 , wherein each switch of the plurality of switches is configured to apply a signal from the additional conductive line to a conductive line of the first plurality of conductive lines.
15. The apparatus of claim 9 , wherein the plurality of switches includes a first switch coupled between the additional conductive line and a selected conductive line of the first plurality of conductive lines, and wherein the first switch is configured to be in a conductive state based at least in part on a voltage difference between a voltage on the additional conductive line and a voltage on the selected conductive line.
16. The apparatus of claim 9 , further comprising additional switches, each of the additional switches being coupled between a second additional conductive line and a conductive line of the second plurality of conductive lines, wherein each of the additional switches includes a phase change material.
17. The apparatus of claim 16 , wherein the additional switches include a first switch coupled between the second additional conductive line and a selected conductive line of the second plurality of conductive lines, and the first switch of the additional switches is configured to be in a conductive state based at least in part on a voltage difference between a voltage on the second additional conductive line and a voltage on the selected conductive line of the second plurality of conductive lines.