Peeling method and method of manufacturing semiconductor device
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( 11 ) and a second material layer ( 12 ) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer ( 12 ) or an interface thereof.
1. A display device comprising:
a film comprising an organic material;
a first insulating film on and in contact with the film;
a thin film transistor over the first insulating film;
a second insulating film over the thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode;
a second electrode over the light emitting layer;
a third insulating film over the second electrode;
a bonding layer on and in contact with the third insulating film; and
a flexible substrate on and in contact with the bonding layer.
2. The display device according to claim 1 , wherein the first insulating film comprises silicon and oxygen.
3. The display device according to claim 1 , wherein a channel forming region of the thin film transistor comprises silicon.
4. The display device according to claim 1 , wherein the display device is configured to emit light from the light emitting layer through the flexible substrate.
5. The display device according to claim 1 , wherein the flexible substrate is plastic.
6. A display device comprising:
a first flexible substrate;
a first bonding layer on and in contact with the first flexible substrate;
a film comprising an organic material, the film on and in contact with the first bonding layer;
a first insulating film on and in contact with the film;
a thin film transistor over the first insulating film;
a second insulating film over the thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode;
a second electrode over the light emitting layer;
a third insulating film over the second electrode;
a second bonding layer on and in contact with the third insulating film; and
a second flexible substrate on and in contact with the second bonding layer.
7. The display device according to claim 6 , wherein the first insulating film comprises silicon and oxygen.
8. The display device according to claim 6 , wherein a channel forming region of the thin film transistor comprises silicon.
9. The display device according to claim 6 , wherein the display device is configured to emit light from the light emitting layer through the first flexible substrate.
10. The display device according to claim 6 , wherein the display device is configured to emit light from the light emitting layer through the second flexible substrate.