IP Library Granted Patent US 9,910,823
Granted Patent B2
US 9,910,823 · App. 13/467,816 · Granted Mar 6, 2018

Stack processor using a ferroelectric random access memory (F-RAM) having an instruction set optimized to minimize memory fetch

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Quick Facts
Patent No.
US 9,910,823
App. No.
13/467,816
Granted
Mar 6, 2018
Kind
B2
Abstract

A stack processor using a non-volatile, ferroelectric random access memory (F-RAM) for both code and data space. The stack processor is operative in response to as many as 64 possible instructions based upon a 16 bit word. Each of the instructions in the 16 bit word comprises 3 five bit instructions and a 16 th bit which is applicable to each of the 3 five bit instructions thereby making each instruction effectively 6 bits wide.

Claims (28)

1. An integrated circuit device comprising:

a stack processor comprising a processor core and an interrupt controller; and

a stack including a stack top comprising a volatile memory in the processor core and a bottom stack comprising a non-volatile memory coupled to said processor core for storing associated program code and data,

wherein said stack processor is operative in response to instructions based upon a 16 bit word, wherein said 16 bit word comprises 3 five bit instructions and a 16th bit applicable to each of said 3 five bit instructions.

2. The integrated circuit device of claim 1 wherein said non-volatile memory comprises ferroelectric random access memory.

3. The integrated circuit device of claim 1 wherein each of said instructions in said 16 bit word comprises 3 five bit instructions and a 16 th bit applicable to each of said 3 five bit instructions.

4. The integrated circuit device of claim 1 wherein said 16th bit is the most significant bit.

5. The integrated circuit device of claim 1 further comprising:

a clock circuit coupled to said processor core and said interrupt controller for providing a clock signal thereto.

6. The integrated circuit device of claim 1 further comprising:

a reset circuit coupled to said processor core and said interrupt controller for providing a reset signal thereto.

7. The integrated circuit device of claim 1 further comprising:

at least one module coupled to said stack processor.

8. The integrated circuit device of claim 1 wherein said non-volatile memory receives read and write commands from said processor core.

9. The integrated circuit device of claim 4 wherein said non-volatile memory additionally receives address commands from said processor core.

10. The integrated circuit device of claim 9 wherein said non-volatile memory writes data to memory locations indicated by said address commands from said processor core in response to said write commands.

11. The integrated circuit device of claim 9 wherein said non-volatile memory reads data from memory locations indicated by said address commands from said processor core in response to said read commands.

12. The integrated circuit device of claim 1 wherein at least one data stack of said processor core is stored in said non-volatile memory.

13. The integrated circuit device of claim 1 wherein at least one return stack of said processor core is stored in said non-volatile memory.

14. An integrated circuit device comprising:

a stack processor comprising a processor core and an interrupt controller; and

a stack including a stack top comprising a volatile memory in the processor core and a bottom stack comprising a non-volatile memory coupled to said processor core for storing associated program code and data,

wherein said stack processor is operative in response to 64 possible instructions based upon a 16 bit word, each of said instructions in said 16 bit word comprises 3 five bit instructions and a 16th bit applicable to each of said 3 five bit instructions and wherein said 16th bit is the most significant bit.

15. The integrated circuit device of claim 14 wherein said non-volatile memory comprises ferroelectric random access memory.

16. The integrated circuit device of claim 14 wherein said volatile memory comprises complementary metal oxide semiconductor memory.

17. The integrated circuit device of claim 14 wherein at least one data stack of said processor core is stored in said non-volatile memory.

18. The integrated circuit device of claim 17 wherein at least one return stack of said processor core is stored in said non-volatile memory.

19. The integrated circuit device of claim 18 wherein said stack processor comprises a stack-based processor including a Forth core, and wherein transferring data between the data and return stacks comprises transferring data using the Forth programming language.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Mar 16, 2022
From: MUFG UNION BANK, N.A.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 059410/0438 →
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Oct 28, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MUFG UNION BANK, N.A.
Reel/Frame 050896/0366 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2012
From: RAMTRON INTERNATIONAL CORPORATION
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 029408/0437 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2012
From: FILLERE, FRANCK
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 028190/0293 →