Light-emitting element and light-emitting device
View Patent ↗Provided are a light-emitting element capable of reducing power consumption by increasing its light extraction efficiency and a light-emitting device using the light-emitting element. A light-emitting element includes a composite material, which contains an organic compound having a high hole-transport property and an electron acceptor and in which the spin density measured by an electron spin resonance (ESR) method is less than or equal to 1×10 19 spins/cm 3 , the spin density is less than or equal to 3×10 19 spins/cm 3 when the molar ratio of the electron acceptor to the organic compound is greater than or equal to 1, or the spin density is less than or equal to 5×10 19 spins/cm 3 when the molar ratio is greater than or equal to 2.
1. A light-emitting element comprising:
a first electrode;
a hole-injection layer over and in contact with the first electrode;
a hole-transport layer over the hole-injection layer;
a layer comprising a light-emitting substance over the hole-transport layer; and
a second electrode over the layer,
wherein the hole-injection layer comprises a composite material,
wherein the composite material comprises an organic compound having a hole-transport property and an electron acceptor,
wherein the organic compound comprises at least one of dibenzothiophen and dibenzofuran,
wherein a molar ratio of the electron acceptor to the organic compound is greater than or equal to 1,
wherein an ionization potential of the organic compound is 5.7 eV or more, and
wherein a spin density in the composite material is less than or equal to 3×10 19 spins/cm 3 by an ESR measurement.
2. The light-emitting element according to claim 1 , wherein the organic compound comprises at least one of 1,3,5-tri(dibenzothiophen-4-yl)benzene and 1,3,5-tri(dibenzofuran-4-yl)benzene.
3. The light-emitting element according to claim 1 , wherein the electron acceptor comprises at least one of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.
4. A light-emitting device comprising the light-emitting element according to claim 1 .
5. A light-emitting element comprising:
a first electrode;
a hole-injection layer over and in contact with the first electrode;
a hole-transport layer over the hole-injection layer;
a layer comprising a light-emitting substance over the hole-transport layer; and
a second electrode over the layer,
wherein the hole-injection layer comprises a composite material,
wherein the composite material comprises an organic compound having a hole-transport property and an electron acceptor,
wherein the organic compound comprises at least one of dibenzothiophen and dibenzofuran,
wherein a molar ratio of the electron acceptor to the organic compound is greater than or equal to 2,
wherein an ionization potential of the organic compound is 5.7 eV or more, and
wherein a spin density in the composite material is less than or equal to 5×10 19 spins/cm 3 by an ESR measurement.
6. The light-emitting element according to claim 5 , wherein the organic compound comprises at least one of 1,3,5-tri(dibenzothiophen-4-yl)benzene and 1,3,5-tri(dibenzofuran-4-yl)benzene.
7. The light-emitting element according to claim 5 , wherein the electron acceptor comprises at least one of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.
8. A light-emitting device comprising the light-emitting element according to claim 5 .
9. A light-emitting element comprising:
a first electrode;
a first layer comprising a light-emitting substance over the first electrode;
a charge generation layer over the first layer;
a second layer comprising a light-emitting substance over the charge generation layer; and
a second electrode over the second layer,
wherein the charge generation layer comprises a composite material,
wherein the composite material comprises an organic compound having a hole-transport property and an electron acceptor,
wherein the organic compound comprises at least one of dibenzothiophen and dibenzofuran,
wherein a molar ratio of the electron acceptor to the organic compound is greater than or equal to 1,
wherein an ionization potential of the organic compound is 5.7 eV or more, and
wherein a spin density in the composite material is less than or equal to 3×10 19 spins/cm 3 by an ESR measurement.
10. The light-emitting element according to claim 9 , wherein the organic compound comprises at least one of 1,3,5-tri(dibenzothiophen-4-yl)benzene and 1,3,5-tri(dibenzofuran-4-yl)benzene.
11. The light-emitting element according to claim 9 , wherein the electron acceptor comprises at least one of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.
12. A light-emitting device comprising the light-emitting element according to claim 9 .
13. A light-emitting element comprising:
a first electrode;
a first layer comprising a light-emitting substance over the first electrode;
a charge generation layer over the first layer;
a second layer comprising a light-emitting substance over the charge generation layer; and
a second electrode over the second layer,
wherein the charge generation layer comprises a composite material,
wherein the composite material comprises an organic compound having a hole-transport property and an electron acceptor,
wherein the organic compound comprises at least one of dibenzothiophen and dibenzofuran,
wherein a molar ratio of the electron acceptor to the organic compound is greater than or equal to 2,
wherein an ionization potential of the organic compound is 5.7 eV or more, and
wherein a spin density in the composite material is less than or equal to 5×10 19 spins/cm 3 by an ESR measurement.
14. The light-emitting element according to claim 13 , wherein the organic compound comprises at least one of 1,3,5-tri(dibenzothiophen-4-yl)benzene and 1,3,5-tri(dibenzofuran-4-yl)benzene.
15. The light-emitting element according to claim 13 , wherein the electron acceptor comprises at least one of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide,
molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.
16. A light-emitting device comprising the light-emitting element according to claim 13 .