LIGHT EMITTING DIODE
A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 7 /cm 3 . The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.
1 . A light emitting diode, comprising:
a substrate;
a n-type semiconductor layer disposed on the substrate;
an active layer having a defect density DD, wherein DD≧2×10 7 /cm 3 , the active layer is disposed on a portion of the n-type semiconductor layer, and a wavelength λ, of light emitted by the active layer is 222 nm≦λ≦405 nm, the active layer comprising i quantum barrier layers and (i−1) quantum wells, each of the quantum wells is disposed between any two quantum barrier layers, and i is a natural number greater than or equal to 2, wherein a n-type dopant is doped in at least k layers of the quantum barrier layers, k being a natural number greater than or equal to 1, when i is an even number, k≧i/2, and when i is an odd number, k≧(i−1)/2;
a p-type semiconductor layer disposed on the active layer; and
a first electrode and a second electrode, wherein the first electrode is disposed on a portion of the n-type semiconductor layer, and the second electrode is disposed on a portion of the p-type semiconductor layer.
2 . The light emitting diode as claimed in claim 1 , wherein the k quantum barrier layers doped with the n-type dopant are located nearest to the n-type semiconductor layer.
3 . The light emitting diode as claimed in claim 1 , wherein a material of the quantum barrier layers comprises Al x In y Ga 1-x-y N, wherein 0≦x≦1, 0≦y≦0.3, and x+y≦1.
4 . The light emitting diode as claimed in claim 1 , wherein a thickness of each of the quantum barrier layers is between 5 nm to 15 nm.
5 . The light emitting diode as claimed in claim 1 , wherein a material of the quantum barrier layers comprises Al m In n Ga 1-m-n N, wherein 0≦m<1, 0≦n≦0.5, m+n≦1, x>m, and n≧y.
6 . A light emitting diode, comprising:
a substrate;
a n-type semiconductor layer disposed on the substrate;
an active layer having a defect density DD, wherein DD≧2×10 7 /cm 3 , the active layer is disposed on a portion of the n-type semiconductor layer, and a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, the active layer comprising i quantum barrier layers and (i−1) quantum wells, each of the quantum wells is disposed between any two quantum barrier layers, and i is a natural number greater than or equal to 2, wherein a n-type dopant is doped in at least k layers of the quantum barrier layers, k being a natural number greater than or equal to 1, when i is an even number, k≧i/2, and when i is an odd number, k≧(i−1)/2;
a p-type semiconductor layer disposed on the active layer, a doping concentration of the quantum barrier layer in the k quantum barrier layers nearest to the p-type semiconductor layer being less than or equal to the doping concentration of the other quantum barrier layers in the k quantum barrier layers; and
a first electrode and a second electrode, wherein the first electrode is disposed on a portion of the n-type semiconductor layer, and the second electrode is disposed on a portion of the p-type semiconductor layer.
7 . The light emitting diode as claimed in claim 6 , wherein the k quantum barrier layers doped with the n-type dopant are located nearest to the n-type semiconductor layer.
8 . The light emitting diode as claimed in claim 7 , wherein the doping concentration of the k quantum barrier layers is at least 5×10 17 /cm 3 .
9 . The light emitting diode as claimed in claim 7 , wherein the doping concentration of the each of the k quantum barrier layers counting sequentially from the n-type to the p-type semiconductor layer side are C 1 , C 2 , . . . C k , where C k ≦C k-1 .
10 . The light emitting diode as claimed in claim 6 , wherein a material of the quantum barrier layers comprises Al x In y Ga 1-x-y N, wherein 0≦x≦1, 0≦y≦0.3, and x+y≦1.
11 . The light emitting diode as claimed in claim 6 , wherein a thickness of each of the quantum barrier layers is between 5 nm to 15 nm.
12 . The light emitting diode as claimed in claim 6 , wherein a material of the quantum barrier layers comprises Al m In n Ga 1-m-n N, wherein 0≦m<1, 0≦n≦0.5, m+n≦1, x>m, and n≧y.
13 . A light emitting diode, comprising:
a substrate;
a n-type semiconductor layer disposed on the substrate;
an active layer having a defect density DD, wherein DD≧2×10 7 /cm 3 , the active layer is disposed on a portion of the n-type semiconductor layer, and a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, the active layer comprising i quantum barrier layers and (i−1) quantum wells, each of the quantum wells is disposed between any two quantum barrier layers, and i is a natural number greater than or equal to 2, wherein a n-type dopant is doped in at least k layers of the quantum barrier layers, k being a natural number greater than or equal to 1, when i is an even number, k≧i/2, when i is an odd number, k≧(i−1)/2, and a doping concentration of the k quantum barrier layers is from 5×10 17 /cm 3 to 1×10 19 /cm 3 ;
a p-type semiconductor layer disposed on the active layer; and
a first electrode and a second electrode, wherein the first electrode is disposed on a portion of the n-type semiconductor layer, and the second electrode is disposed on a portion of the p-type semiconductor layer.
14 . The light emitting diode as claimed in claim 13 , wherein the k quantum barrier layers doped with the n-type dopant are located nearest to the n-type semiconductor layer.
15 . The light emitting diode as claimed in claim 13 , wherein the doping concentration of the quantum barrier layer in the k quantum barrier layers nearest to the p-type semiconductor layer is less than or equal to the doping concentration of the other quantum barrier layers in the k quantum barrier layers.
16 . The light emitting diode as claimed in claim 13 , wherein a thickness of each of the quantum barrier layers is between 5 nm to 15 nm.