Metal oxide semiconductor field transistor
A metal oxide semiconductor field transistor including a source region, a drain region, a gate and a gate dielectric layer is provided. The drain region is located in a substrate. The drain region has an elliptical spiral shape and a starting portion of the drain region is strip or water drop or has a curvature of 0.02 to 0.0025 [1/um]. The source region located in the substrate is around the drain region. The gate is located above the substrate and between the source region and the drain region. The gate dielectric layer is located between the gate and the substrate.
1. A metal oxide semiconductor field transistor, comprising:
a drain region located in a substrate, the drain region being of a first conductive type and having an elliptical spiral shape, and a starting portion thereof having a shape of a strip or a water drop, or having a curvature of 0.02 [1/μm] to 0.0025 [1/μm];
a source region, being of the first conductive type, located in the substrate, and surrounds the drain region;
a gate, disposed above the substrate located between the source region and the drain region; and
a gate dielectric layer located between the gate and the substrate.
2. The metal oxide semiconductor field transistor as claimed in claim 1 , wherein the starting portion having the strip shape in the drain region is constituted by an arc portion and a rectangular portion.
3. The metal oxide semiconductor field transistor as claimed in claim 1 , wherein the drain region has a single loop of the elliptical spiral.
4. The metal oxide semiconductor field transistor as claimed in claim 1 , wherein the drain region has a plurality of loops of the elliptical spirals.
5. The metal oxide semiconductor field transistor as claimed in claim 1 , further comprising:
a first doped region of the first conductive type, located between the drain region and the substrate; and
a first doped region of a second conductive type, located in the first doped region of the first conductive type and surrounding the drain region.
6. The metal oxide semiconductor field transistor as claimed in claim 5 , wherein a doping dosage of the first doped region of the second conductive type is higher than a doping dosage of the first doped region of the first conductive type.
7. The metal oxide semiconductor field transistor as claimed in claim 5 , wherein a first turn of the first doped region of the first conductive type has a semi-circular shape.
8. The metal oxide semiconductor field transistor as claimed in claim 7 , further comprising a second doped region of the second conductive type located in the first doped region of the second conductive type, wherein the first doped region of the second conductive type containing the second doped region of the second conductive type is located at the first turn of the first doped region of the first conductive type surrounding the source region, wherein a sum of the doping dosage of the first doped region of the second conductive type and a doping dosage of the second doped region of the second conductive type is higher than the doping dosage of the first doped region of the first conductive type.
9. The metal oxide semiconductor field transistor as claimed in claim 5 , further comprising a second doped region of the first conductive type and a third doped region of the second conductive type, wherein
the second doped region of the first conductive type is located in the substrate around the first doped region of the first conductive type; and
the third doped region of the second conductive type is located in the second doped region of the first conductive type and the source region is located in the third doped region of the second conductive type.
10. The metal oxide semiconductor field transistor as claimed in claim 9 , wherein a region enclosed by the third doped region of the second conductive type in a center of the metal oxide semiconductor field transistor has a circular shape.
11. The metal oxide semiconductor field transistor as claimed in claim 9 , further comprising two heavily doped regions of the first conductive type located in the third doped region of the second conductive type and the first doped region of the first conductive type respectively.
12. The metal oxide semiconductor field transistor as claimed in claim 11 , wherein the source region and the drain region are disposed in the heavily doped regions of the first conductive type respectively.
13. The metal oxide semiconductor field transistor as claimed in claim 1 , further comprising a lightly doped region of the first conductive type located in the substrate between the source region and the gate to be electrically connected to the source region.
14. The metal oxide semiconductor field transistor as claimed in claim 1 , further comprising a contact opening electrically connected to a first turn of the drain region.
15. The metal oxide semiconductor field transistor as claimed in claim 1 , further comprising a contact opening electrically connected to the starting portion of the drain region.
16. The metal oxide semiconductor field transistor as claimed in claim 1 , wherein when the first conductive type is an N-type, the second conductive type is a P-type; when the first conductive type is a P-type, the second conductive type is an N-type.
17. The metal oxide semiconductor field transistor as claimed in claim 1 , wherein the drain region is completely enclosed by the source region.