Method and apparatus for wireless power transmission using power receiver
A rectifier is provided. The rectifier includes a first rectification unit having an anode connecting to a negative radio frequency (RF) port and a cathode connecting to a positive direct current (DC) port, a second rectification unit having an anode connecting to a positive RF port and a cathode connecting to the positive DC port, a third rectification unit having an anode connecting to a ground and a cathode connecting to the negative RF port, and a fourth rectification unit having an anode connecting to the ground and a cathode connecting to the positive RF port. The first rectification unit includes a plurality of first diodes that are connected in parallel, and the second rectification unit includes a plurality of second diodes that are connected in parallel.
1. A rectifier, comprising:
a first rectification unit having an anode and a cathode, the anode being connected to a negative radio frequency (RF) port, and the cathode being connected to a positive direct current (DC) port;
a second rectification unit having an anode and a cathode, the anode being connected to a positive RF port, and the cathode being connected to the positive DC port;
a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and
a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,
wherein the first rectification unit comprises a plurality of first diodes that are connected in parallel, and the second rectification unit comprises a plurality of second diodes that are connected in parallel.
2. The rectifier of claim 1 , wherein the first rectification unit comprises two first diodes, and the second rectification unit comprises two second diodes.
3. The rectifier of claim 1 , wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.
4. The rectifier of claim 1 , wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),
wherein the fourth rectification unit comprises a second N-MOSFET,
wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and
wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.
5. The rectifier of claim 4 , wherein a resistance of the first N-MOSFET is equal to or less than 200 milliohm (mΩ), and an input capacitance of the first N-MOSFET is equal to or less than 300 picofarads (pF), and
wherein a resistance of the second N-MOSFET is equal to or less than 200 mΩ, and an input capacitance of the second N-MOSFET is equal to or less than 300 pF.
6. The rectifier of claim 1 , further comprising:
a capacitor connected to the positive DC port and the ground.
7. A power receiver, comprising:
a resonator configured to receive a power;
a rectifier configured to receive the power from the resonator via a positive radio frequency (RF) port and a negative RF port, and to rectify the received power; and
a direct current (DC)-to-DC (DC/DC) converter configured to convert the rectified power,
wherein the rectifier comprises:
a first rectification unit having an anode and a cathode, the anode being connected to the negative RF port, and the cathode being connected to a positive DC port;
a second rectification unit having an anode and a cathode, the anode being connected to the positive RF port, and the cathode being connected to the positive DC port;
a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and
a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,
wherein the first rectification unit comprises a plurality of first diodes connected in parallel, and the second rectification unit comprises a plurality of second diodes connected in parallel.
8. The power receiver of claim 7 , wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.
9. The power receiver of claim 8 , wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),
wherein the fourth rectification unit comprises a second N-MOSFET,
wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and
wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.
10. The power receiver of claim 8 , wherein the rectifier further comprises a capacitor connected to the positive DC port and the ground.
11. A power receiving method, comprising:
receiving, by a resonator, a power;
receiving, by a rectifier, the power from the resonator via a positive radio frequency (RF) port and a negative RF port, and rectifying the received power; and
converting, by a direct current (DC)-to-DC (DC/DC) converter, the rectified power,
wherein the rectifier comprises:
a first rectification unit having an anode and a cathode, the anode being connected to the negative RF port, and the cathode being connected to a positive DC port;
a second rectification unit having an anode and a cathode, the anode being connected to the positive RF port, and the cathode being connected to the positive DC port;
a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and
a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,
wherein the first rectification unit comprises a plurality of first diodes connected in parallel, and the second rectification unit comprises a plurality of second diodes connected in parallel.
12. The power receiving method of claim 11 , wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.
13. The power receiving method of claim 11 , wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),
wherein the fourth rectification unit comprises a second N-MOSFET,
wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and
wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.
14. The power receiving method of claim 11 , wherein the rectifier further comprises a capacitor connected to the positive DC port and the ground.
15. A non-transitory computer readable recording medium storing a program to cause a computer to implement the method of claim 11 .