Large-scale fabrication of vertically aligned ZnO nanowire arrays
A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.
1. A generator, comprising
(a) a substrate having a top surface;
(b) a first electrode layer disposed on the top surface of the substrate;
(c) a piezoelectric structure extending from the first electrode layer, the piezoelectric structure having a top end
(d) a poly(methyl methacrylate) insulating layer disposed on the top end of the piezoelectric structure; and
(e) a second electrode layer disposed on the insulating layer and spaced apart from the piezoelectric structure.
2. The generator of claim 1 , wherein the insulating layer comprises a p-type polymer.
3. The generator of claim 1 , wherein the piezoelectric structure generates an electric field that influences the second electrode layer when the piezoelectric structure is are deformed and wherein the insulating layer inhibits charge transport from the piezoelectric structure to the second electrode layer.
4. The generator of claim 1 , wherein the piezoelectric structure comprises a piezoelectric film.
5. The generator of claim 1 , wherein the piezoelectric structure comprises a dense plurality of vertically-aligned piezoelectric elongated nanostructures.
6. The generator of claim 5 , wherein the nanostructures comprise densely packed zinc oxide nanowires.
7. The generator of claim 1 , wherein the first electrode layer comprises indium tin oxide.
8. The generator of claim 1 , wherein the second electrode layer comprises a metal.
9. The generator of claim 1 , wherein the substrate comprises a flexible material.
10. The generator of claim 9 , wherein the flexible material comprises polystyrene.
11. The generator of claim 1 , wherein the substrate comprises silicon.
12. The generator of claim 1 , wherein the nanostructures are disposed in a plurality groups, wherein the nanostructures of each group are spaced apart from each adjacent group, thereby reducing lateral charge transfer between the nanostructures.
13. A generator, comprising
(a) a substrate having a top surface;
(b) a first electrode layer disposed on the top surface of the substrate;
(c) a piezoelectric structure extending from the first electrode layer, the piezoelectric structure having a top end
(d) an insulating layer disposed on the top end of the piezoelectric structure; and
(e) a second electrode layer disposed on the insulating layer and spaced apart from the piezoelectric structure and
(f) a packaging layer disposed around the substrate, the first electrode layer, the piezoelectric structure, the insulating layer and the second electrode layer.
14. The generator of claim 13 , wherein the insulating layer comprises a p-type polymer.
15. The generator of claim 13 , wherein the piezoelectric structure generates an electric field that influences the second electrode layer when the piezoelectric structure is are deformed and wherein the insulating layer inhibits charge transport from the piezoelectric structure to the second electrode layer.
16. The generator of claim 13 , wherein the piezoelectric structure comprises a piezoelectric film.
17. The generator of claim 13 , wherein the piezoelectric structure comprises a dense plurality of vertically-aligned piezoelectric elongated nanostructures.
18. The generator of claim 13 , wherein the first electrode layer comprises indium tin oxide.
19. The generator of claim 13 , wherein the second electrode layer comprises a metal.
20. The generator of claim 13 , wherein the substrate comprises a flexible material.
21. The generator of claim 13 , wherein the substrate comprises silicon.
22. The generator of claim 13 , wherein the packaging layer comprises poly(methyl methacrylate).
23. The generator of claim 13 , wherein the nanostructures are disposed in a plurality groups, wherein the nanostructures of each group are spaced apart from each adjacent group, thereby reducing lateral charge transfer between the nanostructures.