IP Library Granted Patent US 8,817,564
Granted Patent B2
US 8,817,564 · App. 13/476,749 · Granted Aug 26, 2014

Circuit for sensing multi-level cell

Inventor: Cheng-Hung Tsai (New Taipei, TW)
Assignee: Elite Semiconductor Memory Technology Inc.
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Quick Facts
Patent No.
US 8,817,564
App. No.
13/476,749
Granted
Aug 26, 2014
Kind
B2
Abstract

A circuit for sensing a multi-level cell (MLC) comprises a first switch associated with a first read bit, a second switch associated with a second read bit, a first switch control unit to control the first switch in response to a first data bit from a counter, and a second switch control unit to control the second switch in response to a second data bit from the counter.

Claims (31)

1. A circuit for sensing a multi-level cell (MLC), comprising:

a first switch associated with a first read bit;

a second switch associated with a second read bit;

a first switch control unit to control the first switch in response to a first data bit from a counter; and

a second switch control unit to control the second switch in response to a second data bit from the counter.

2. The circuit of claim 1 , wherein each of the first switch control unit and the second switch control unit includes a logic AND gate.

3. The circuit of claim 1 , wherein the first data bit represents the most significant bit of the counter and the second data bit represents the second most significant bit of the counter.

4. The circuit of claim 1 further comprising a sense amplifier having an output coupled to the first switch and the second switch.

5. The circuit of claim 4 , wherein an output of the sense amplifier is allowed to overwrite the first read bit in response to the first data bit, and allowed to overwrite the second read bit in response to the second data bit.

6. The circuit of claim 1 further comprising:

a first latch unit including an input coupled with the first switch and an output coupled to an input of the second switch control unit; and

a second latch unit including an input coupled with the second switch.

7. The circuit of claim 6 further comprising a first sense amplifier coupled between the first switch and the first latch unit, and a second sense amplifier coupled between the second switch and the second latch unit.

8. The circuit of claim 7 , wherein an output of the first sense amplifier is allowed to overwrite the first read bit in response to the first data bit, and an output of the second sense amplifier is allowed to overwrite the second read bit in response to the second data bit.

9. The circuit of claim 6 further comprising a first inverter coupled to the first latch unit and a second inverter coupled to the second latch unit.

10. A circuit for sensing a multi-level cell (MLC), comprising:

a first switch associated with a first read bit;

a first sense amplifier coupled to the first switch; and

a first switch control unit to control the first switch so as to allow an output from the first sense amplifier to overwrite the first read bit in response to a first data bit from a counter.

11. The circuit of claim 10 further comprising:

a second switch associated with a second read bit; and

a second switch control unit to control the second switch in response to a second data bit from the counter.

12. The circuit of claim 11 , wherein the first sense amplifier includes an output coupled to the first switch and the second switch.

13. The circuit of claim 11 further comprising:

a first latch unit including an input coupled with the first switch and an output coupled to an input of the second switch control unit; and

a second latch unit including an input coupled with the second switch.

14. The circuit of claim 13 , wherein the first sense amplifier is coupled between the first switch and the first latch unit.

15. The circuit of claim 13 further comprising a second sense amplifier coupled between the second switch and the second latch unit.

16. The circuit of claim 13 further comprising a first inverter coupled to the first latch unit and a second inverter coupled to the second latch unit.

17. The circuit of claim 11 , wherein each of the first switch control unit and the second switch control unit includes a logic AND gate.

18. The circuit of claim 11 , wherein the first data bit represents the most significant bit of the counter and the second data bit represents the second most significant bit of the counter.

Assignments (2)
CHANGE OF NAME Recorded Jun 25, 2025
From: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
To: ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC.
Reel/Frame 071703/0241 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2012
From: TSAI, CHENG-HUNG
To: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
Reel/Frame 028243/0355 →
Continuity (1)
Related Publication 20130308404A1 · Nov 21, 2013