Image sensor structure to reduce cross-talk and improve quantum efficiency
A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
1. A semiconductor device, comprising:
a substrate including:
a pixel region incorporating a photodiode;
a black level correction (BLC) region; and
a bonding-pad region vertically aligned over bonding-pad structures, wherein the bonding-pad region of the substrate comprises a shallow trench isolation (STI);
a grid disposed on a back side illuminating film over the substrate, the grid comprising a conductive material, the grid having walls projecting outwardly from a topmost surface of the back side illuminating film to define a cavity, the cavity vertically aligned with the pixel region, wherein the back side illuminating film comprises a plasma enhanced oxide layer over an anti-reflective coating;
a shield disposed on the back side illuminating film, the shield being vertically aligned with the BLC region, the shield comprising the conductive material; and
a color filter disposed in the cavity between the walls of the grid, a topmost surface of the color filter being substantially coplanar with a topmost surface of the conductive material, a sidewall of the color filter contacting a sidewall of the shield, wherein a material of the color filter does not extend over and vertically aligned with the bonding-pad region of the substrate.
2. The semiconductor device of claim 1 , wherein the conductive material is a metal.
3. The semiconductor device of claim 2 , wherein the metal is tungsten.
4. The semiconductor device of claim 2 , wherein the metal is one of aluminum and copper.
5. The semiconductor device of claim 1 , wherein the color filter includes a polymer.
6. The semiconductor device of claim 1 , wherein a micro-lens is disposed over the topmost surface of the color filter and over a topmost surface of the walls of the grid adjacent to the color filter.
7. The semiconductor device of claim 1 , wherein the grid is configured to inhibit optical cross talk.
8. The semiconductor device of claim 6 , wherein the conductive material contacts the micro-lens.
9. The semiconductor device of claim 1 , wherein sidewalls of the shield and the STI are substantially aligned.
10. The semiconductor device of claim 1 , wherein the photodiode is wider than the color filter.
11. A semiconductor device, comprising:
a substrate including:
pixel regions, each of the pixel regions incorporating a photodiode;
a black level correction (BLC) region; and
a bonding-pad region vertically aligned over bonding-pad structures, wherein the bonding-pad region of the substrate comprises a shallow trench isolation (STI);
a back side illuminating film on the substrate, the back side illuminating film comprising a plasma enhanced oxide layer over an anti-reflective coating, wherein the anti-reflective coating engages the substrate;
a grid disposed on the back side illuminating film over the substrate, the grid comprising a conductive material, the grid having walls projecting outwardly from a topmost surface of the back side illuminating film to define cavities, each of the cavities vertically aligned with one of the pixel regions;
a shield disposed on the back side illuminating film, the shield being vertically aligned with the BLC region, the shield comprising the conductive material, a sidewall of the shield being a sidewall of at least one of the cavities, a top surface of the shield being substantially coplanar with a top surface of the walls of the grid;
a color filter disposed in each of the cavities, wherein a material of the color filter does not extend over and vertically aligned with the bonding-pad region of the substrate; and
a micro-lens disposed over each color filter, wherein the conductive material extends from the plasma enhanced oxide layer to the micro-lens.
12. The semiconductor device of claim 11 , wherein the conductive material comprises a metal.
13. The semiconductor device of claim 11 , wherein a top surface of the color filter is substantially planar to the top surface of the walls of the grid adjacent to the color filter.
14. A semiconductor device, comprising:
a substrate including:
pixel regions, each of the pixel regions incorporating a photodiode;
a black level correction (BLC) region adjacent the pixel regions; and
a bonding-pad region vertically aligned over bonding-pad structures, wherein the BLC region is disposed between the pixel regions and the bonding-pad region, and wherein the bonding-pad region of the substrate comprises a shallow trench isolation (STI);
a backside illuminating film on the substrate, the backside illuminating film including a plasma enhanced oxide and an anti-reflective coating;
a grid disposed on the backside illuminating film, the grid comprising a conductive material throughout the grid, the grid having walls projecting outwardly from a topmost surface of the backside illuminating film to define cavities, each of the cavities vertically aligned with one of the pixel regions;
a shield disposed on the backside illuminating film, the shield being vertically aligned with the BLC region, the shield comprising the conductive material, a thickness of the conductive material disposed over the pixel regions being substantially the same as a thickness of the conductive material disposed over the BLC region, a topmost surface of the shield being substantially coplanar with a topmost surface of the walls of the grid;
a color filter disposed in each of the cavities, wherein a material of the color filter does not extend over and vertically aligned with the bonding-pad region of the substrate; and
a micro-lens disposed over each color filter, wherein the conductive material contacts the micro-lens.
15. The semiconductor device of claim 14 , wherein the plasma enhanced oxide abuts the anti-reflective coating.
16. The semiconductor device of claim 14 , wherein the anti-reflective coating of the backside illuminating film engages the substrate.
17. The semiconductor device of claim 14 , wherein the plasma enhanced oxide engages the grid.
18. The semiconductor device of claim 14 , wherein the conductive material is a metal.
19. The semiconductor device of claim 14 , wherein plasma enhanced oxide is disposed over the anti-reflective coating.