THERMAL SPREADER HAVING GRADUATED THERMAL EXPANSION PARAMETERS
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a thermal spreader having graduated thermal expansion parameters. In some embodiments, the thermal spreader may have a first layer with a first coefficient of thermal expansion (CTE) and a second layer with a second CTE that is greater than the first CTE. Other embodiments may be described and/or claimed.
1 . An apparatus comprising:
a die;
a thermal spreader having a first layer with a first coefficient of thermal expansion (CTE) and a second layer with a second CTE that is greater than the first CTE, the die coupled with the first layer of the thermal spreader; and
a heat sink coupled with the second layer of the thermal spreader.
2 . The apparatus of claim 1 , wherein the thermal spreader further comprises a third layer, disposed between the first and second layers, the third layer having a third CTE that is between the first and second CTEs.
3 . The apparatus of claim 1 , wherein the electronic component has a third CTE and the first CTE is matched with the third CTE.
4 . The apparatus of claim 1 , wherein the heat sink has a third CTE and the second CTE is matched with the third CTE.
5 . The apparatus of claim 1 , wherein the thermal spreader is coupled with the heat sink by a plurality of screws.
6 . The apparatus of claim 5 , wherein the thermal spreader is configured to exhibit a deflection upon application of a thermal load that counteracts a deflection caused by coupling of the thermal spreader with the heat sink by the plurality of screws.
7 . The apparatus of claim 1 , wherein the thermal spreader is coupled with the heat sink by a solder layer.
8 . The apparatus of claim 7 , wherein the first CTE is matched with a third CTE of the die and the second CTE is matched with a fourth CTE of the heat sink.
9 . The apparatus of claim 1 , wherein the first CTE is within a range of approximately 4-7 parts per million per degree Celsius (ppm/° C.) and the second CTE is within a range of approximately 14-28 ppm/° C.
10 . A method comprising:
providing a first layer of a thermal spreader, the first layer having a first coefficient of thermal expansion (CTE);
coupling a second layer of the thermal spreader with the first layer, the second layer having a second CTE that is less than the first CTE;
coupling a die with the second layer; and
coupling a heat sink with the first layer.
11 . The method of claim 10 , wherein coupling the second layer with the first layer comprises:
forming the second layer on the first layer.
12 . The method of claim 11 , wherein forming the second layer on the first layer comprises:
depositing the second layer on the first layer by a deposition process.
13 . The method of claim 10 , wherein coupling the second layer with the first layer comprises:
attaching the second layer with the first layer.
14 . The method of claim 13 , wherein attaching the second layer with the first layer comprises:
rolling the second layer on the first layer; and
laminating the second layer with the first layer.
15 . The method of claim 13 , wherein attaching the second layer with the first layer comprises:
brazing the second layer with the first layer using a filler material.
16 . The method of claim 10 , further comprising:
coupling one or more intermediate layers between the first and second layers.
17 . The method of claim 10 , wherein coupling the heat sink with the first layer comprises:
coupling the heat sink with a package that includes the thermal spreader with a plurality of screws.
18 . The method of claim 10 , wherein coupling the heat sink with the first layer comprises:
soldering the heat sink with the first layer.
19 . A system comprising:
a transceiver configured to provide a radio frequency (RF) signal;
a power amplification module configured to receive the RF signal from the transceiver and amplify the RF signal for an over-the-air transmission; and
an integrated circuit (IC) device, disposed in the transceiver or in the PA module, the IC device including a thermal spreader coupled with a die and a heat sink, the thermal spreader including graduated thermal expansion parameters.
20 . The system of claim 19 , wherein the thermal spreader includes:
a first layer, coupled with the die, having a first coefficient of thermal expansion (CTE); and
a second layer, coupled with the heat sink, having a second CTE that is greater than the first CTE.