TSV fabrication using a removable handling structure
View Patent ↗A method for forming an interconnection element having metalized structures includes forming metalized structures in an in-process unit that has a support material layer with first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure. The metalized structures are formed extending through the thickness of the support material layer. The method also includes etching at least a portion of the insulating layer to remove the handling structure from the in-process unit and further processing the in-process unit to form the interconnection element.
1. A method for forming an interconnection element having metalized structures, comprising:
forming metalized structures in an in-process unit, the in-process unit including a support material layer having first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure, the metalized structures being formed extending through the thickness of the support material layer; and
etching at least a portion of the insulating layer to remove the handling structure from the in-process unit; and
further processing the in-process unit to form the interconnection element.
2. The method of claim 1 , wherein at least some of the metalized structures are formed as metalized vias.
3. The method of claim 1 , wherein at least some of the metalized structures are formed as slots.
4. The method of claim 1 , wherein the handling structure includes a plurality of structural portions separated from the support material layer by the insulating layer prior to the removing step, the in-process unit having at least one open area through which the insulating layer is exposed, the handling structure being spaced away from the support material layer in the open area, and wherein the step of etching at least a portion of the insulating layer includes bringing the insulating layer into contact with an etchant solution at least through the at least one open area.
5. The method of claim 4 , wherein the handling structure includes a plurality of openings formed through a thickness thereof in a direction of the thickness of the support material layer, and wherein the openings expose respective portions of the insulating layer in areas for formation of at least one metalized structure.
6. The method of claim 4 , wherein the handling structure includes first portions thereof that are in contact with corresponding portions of the insulating layer and second portions that are spaced apart from the insulating layer in a direction of the thickness of the support material layer in respective areas for formation of at least one metalized structure.
7. The method of claim 4 , wherein the handling structure includes a unitary outer portion contacting the insulating layer and defining an outer edge surface of the handling structure, the outer portion surrounding a central open area of the handling structure that exposes an area of the first surface of the support material layer, and wherein the step of etching at least a portion of the insulating layer includes bringing the insulating layer into contact with an etchant solution at least through the central open area.
8. The method of claim 7 , wherein the handling structure further includes a plurality of secondary openings extending in a direction of a height of the handling structure that expose portions of the insulating layer on a surface of the handling structure opposite the insulating layer, and wherein the step of etching further includes bringing the insulating layer into contact with the etchant solution through the secondary openings.
9. The method of claim 4 , wherein the step of etching etches at least a portion of the insulating layer exposed in the open area.
10. The method of claim 4 , wherein forming the metalized structures includes forming openings through the thickness of the support material layer by processing applied to the support material layer from above the first surface and from above the second surface thereof, and depositing a metal within the openings to form the metalized structures.
11. The method of claim 10 , wherein the metal is deposited within the openings by processing applied to the support material layer from above the first surface and from above the second surface thereof.
12. The method of claim 4 , wherein forming the metalized structures includes forming openings through the thickness of the support material layer and depositing a metal within the openings to form the metalized structures by processing applied to the support material layer from above the first surface and from above the second surface thereof.
13. The method of claim 1 , wherein forming the metalized structures includes etching through the thickness of the support material layer from over the second surface thereof selectively relative to a material of the insulating layer.
14. The method of claim 13 , wherein during the etching an etch rate of the support material layer by the etchant is greater than an etch rate of the insulating layer by at least a factor of 100.
15. The method of claim 13 , wherein the first surface of the support material layer extends in at least one lateral direction parallel to the second surface and wherein the insulating layer and the handling structure extends continuously along the first surface in the at least one lateral direction from a first edge of the support material layer to a second edge thereof opposite to the first edge prior to removal of the handling structure.
16. The method of claim 13 , further comprising segmenting the handling structure to expose the insulating layer thereon in at least one area prior to the step of etching.
17. The method of claim 16 , wherein the handling structure is segmented by one of sawing, reactive ion method etching, or laser dicing.
18. The method of claim 16 , wherein the handling structure is processed to reduce a thickness thereof prior to segmenting.
19. The method of claim 1 , wherein the step of further processing includes forming electrically conductive contacts connected with ends of the metalized structures exposed at at least one of the first or second surfaces of the support material layer.
20. The method of claim 1 , wherein the step of further processing includes forming a redistribution layer over at least one of the first and second surfaces of the support material layer, including forming conductive contacts exposed at a surface of the redistribution layer and spaced from the ends of the metalized structures in one or more lateral directions therefrom and conductive interconnects connecting the end surfaces with the contacts.
21. The method of claim 20 , wherein the redistribution layer is formed over the first surface of the support material layer and includes a portion of the insulation layer that remains after removal of the handling structure.
22. The method of claim 1 , wherein the insulating layer contains a layer of at least one of an oxide or a nitride.
23. The method of claim 1 , further including the step of forming the insulation layer on the handling structure by film lamination.