IP Library Granted Patent US 8,510,695
Granted Patent B1
US 8,510,695 · App. 13/484,328 · Granted Aug 13, 2013

Techniques for electromigration stress determination in interconnects of an integrated circuit

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,510,695
App. No.
13/484,328
Granted
Aug 13, 2013
Kind
B1
Abstract

A technique for determining stress in interconnects of an integrated circuit design includes generating a maximal spanning tree of a directed graph. The directed graph represents an interconnect of an integrated circuit design. The technique also includes locating a first point on the spanning tree that has a lowest stress and a second point on the spanning tree that has a highest stress. The technique further includes determining whether a maximum first stress between the first and second points is less than a critical stress.

Claims (208)

1. A method of determining stress in interconnects of an integrated circuit design, comprising:

generating, using a data processing system, a maximal spanning tree of a directed graph, wherein the directed graph represents an interconnect network of an integrated circuit design;

locating, using the data processing system, a first point on the spanning tree having a lowest stress and a second point on the spanning tree having a highest stress; and

determining, using the data processing system, whether a maximum first stress between the first and second points is less than a critical stress.

2. The method of claim 1 , further comprising:

indicating, using the data processing system, a pass condition in response to the maximum first stress being less than the critical stress, wherein the maximum first stress is given by:

Δσ

ij

=

c

R

sh

×

Δ

V

ij

where ‘c’ is a material-dependent constant, R sh is the sheet resistance, and ΔV ij is the potential from node ‘i ‘to node ‘j’.

3. The method of claim 1 , further comprising:

determining, using the data processing system, whether a second stress at a node along a path between the first and second points is less than the critical stress in response to the maximum first stress being greater than or equal to the critical stress; and

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being less than the critical stress, a passing condition on an edge connected to the node.

4. The method of claim 1 , further comprising:

determining, using the data processing system, whether a second stress at a node along a path between the first and second points is less than the critical stress in response to the maximum first stress being greater than or equal to the critical stress; and

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being greater than or equal to the critical stress, a failing condition on an edge connected to the node.

5. The method of claim 1 , wherein the lowest stress occurs at a highest potential.

6. The method of claim 1 , wherein the highest stress occurs at a lowest potential.

7. The method of claim 3 , wherein the second stress at node ‘j’ is given by:

σ

j

=

-

c

2

R

sh

×

i

=

1

i

j

N

(

a

T

i

×

Δ

V

ij

)

A

where ‘A’ is the total area of the interconnect, R sh is the sheet resistance, ‘c’ a material-dependent constant, α Ti a partial interconnect area at node ‘i’, ΔV ij is the potential difference between node ‘i’ and node ‘j’; and ‘N’ is the total number of nodes in the directed graph.

8. A data processing system for determining stress in interconnects of an integrated circuit design, the data processing system comprising:

a storage subsystem; and

a processor coupled to the storage subsystem, wherein the processor is configured to generate a maximal spanning tree of a directed graph that represents an interconnect of an integrated circuit design, locate a first point on the spanning tree having a lowest stress and a second point on the spanning tree having a highest stress, and determine whether a maximum first stress between the first and second points is less than a critical stress.

9. The data processing system of claim 8 , wherein the processor is further configured to indicate a pass condition in response to the maximum first stress being less than the critical stress, and wherein the maximum first stress is given by:

Δσ

ij

=

c

R

sh

×

Δ

V

ij

where ‘c’ is a material-dependent constant, R sh is the sheet resistance, and ΔV ij is the potential from node ‘i ‘to node ‘j’.

10. The data processing system of claim 8 , wherein the processor is further configured to determine whether a second stress at a node along a path between the first and second points is less than the critical stress, in response to the maximum first stress being greater than or equal to the critical stress, and indicate, in response to the second stress at the node along the path between the first and second points being less than the critical stress, a passing condition on an edge connected to the node.

11. The data processing system of claim 8 , wherein the processor is further configured to determine whether a second stress at a node along a path between the first and second points is less than the critical stress, in response to the maximum first stress being greater than or equal to the critical stress, and indicate, in response to the second stress at the node along the path between the first and second points being greater than or equal to the critical stress, a failing condition on an edge connected to the node.

12. The data processing system of claim 8 , wherein the lowest stress occurs at a highest potential.

13. The data processing system of claim 8 , wherein the highest stress occurs at a lowest potential.

14. The data processing system of claim 10 , wherein the second stress at node ‘j’ is given by:

σ

j

=

-

c

2

R

sh

×

i

=

1

i

j

N

(

a

T

i

×

Δ

V

ij

)

A

where ‘A’ is the total area of the interconnect, R sh is the sheet resistance, ‘c’ a material dependent constant, α Ti a partial interconnect area at node ‘i’, ΔV ij is the potential difference between node ‘i’ and node ‘j’; and ‘N’ is the total number of nodes in the directed graph.

15. A method of determining stress in interconnects of an integrated circuit design, comprising:

generating, using a data processing system, a maximal spanning tree of a directed graph, wherein the directed graph represents an interconnect network of an integrated circuit design;

locating, using the data processing system, a first point on the spanning tree having a lowest stress and a second point on the spanning tree having a highest stress;

determining, using the data processing system, whether a maximum first stress between the first and second points is less than a critical stress;

indicating, using the data processing system, a pass condition in response to the maximum first stress being less than the critical stress, wherein the maximum first stress is given by:

Δσ

ij

=

c

R

sh

×

Δ

V

ij

where ‘c’ is a material-dependent constant, R sh is the sheet resistance, and ΔV ij is the potential from node ‘i ‘to node ‘j’, and wherein the lowest stress occurs at a highest potential and the highest stress occurs at a lowest potential.

16. The method of claim 15 , further comprising:

determining, using the data processing system, whether a second stress at a node along a path between the first and second points is less than the critical stress in response to the maximum first stress being greater than or equal to the critical stress; and

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being less than the critical stress, a passing condition on an edge connected to the node.

17. The method of claim 16 , wherein the second stress at node ‘j’ is given by:

σ

j

=

-

c

2

R

sh

×

i

=

1

i

j

N

(

a

T

i

×

Δ

V

ij

)

A

where ‘A’ is the total area of the interconnect, R sh is the sheet resistance, ‘c’ a material-dependent constant, α Ti a partial interconnect area at node ‘i’, ΔV ij is the potential difference between node ‘i’ and node ‘j’; and ‘N’ is the total number of nodes in the directed graph.

18. The method of claim 15 , further comprising:

determining, using the data processing system, whether a second stress at a node along a path between the first and second points is less than the critical stress in response to the maximum first stress being greater than or equal to the critical stress; and

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being greater than or equal to the critical stress, a failing condition on an edge connected to the node.

19. The method of claim 18 , wherein the second stress at node ‘j’ is given by:

σ

j

=

-

c

2

R

sh

×

i

=

1

i

j

N

(

a

T

i

×

Δ

V

ij

)

A

where ‘A’ is the total area of the interconnect, R sh is the sheet resistance, ‘c’ a material-dependent constant, α Ti , a partial interconnect area at node ‘i’, ΔV ij is the potential difference between node ‘i’ and node ‘j’; and ‘N’ is the total number of nodes in the directed graph.

20. The method of claim 15 , further comprising:

determining, using the data processing system, whether a second stress at a node along a path between the first and second points is less than the critical stress in response to the maximum first stress being greater than or equal to the critical stress;

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being less than the critical stress, a passing condition on an edge connected to the node; and

indicating, using the data processing system, in response to the second stress at the node along the path between the first and second points being greater than or equal to the critical stress, a failing condition on an edge connected to the node.

Assignments (21)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
323.01(C) ASSIGNMENT OR CHANGE OF NAME IMPROPERLY FILED AND RECORDED BY ANOTHER PERSON AGAINST OWNER'S PATENT Recorded Oct 3, 2019
From: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 052459/0656 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2017
From: NORTH STAR INNOVATIONS INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 041717/0736 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0535 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0555 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0575 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0479 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0501 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030256/0706 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2012
From: DEMIRCAN, ERTUGRUL; SHROFF, MEHUL D.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 028317/0335 →