Bifacial Stack Structures for Thin-Film Photovoltaic Cells
In one embodiment, a photovoltaic cell comprises a transparent substrate having an exposed bottom surface for receiving light; a transparent-conducting-oxide layer positioned over the transparent substrate; a chalcogenide photovoltaic-absorber layer positioned over transparent-conducting oxide layer; and another transparent-conducting-oxide layer positioned over the photovoltaic-absorber layer, where the photovoltaic cell is operable to transmit incident light to both sides of the photovoltaic-absorber layer and to absorb incident light at both the top side and the bottom side of the photovoltaic-absorber layer.
1 . A photovoltaic cell, comprising:
a transparent substrate having an exposed bottom surface operable to receive incident light;
a bottom transparent-conducting-oxide layer positioned over the transparent substrate;
a chalcogenide photovoltaic-absorber layer having a top side and a bottom side, the bottom side being positioned over the bottom transparent-conducting-oxide layer; and
a top transparent-conducting-oxide layer positioned over the top side of the photovoltaic-absorber layer having an exposed top surface operable to receive incident light;
wherein the photovoltaic cell is operable to transmit incident light to both the top side and the bottom side of the photovoltaic-absorber layer, and wherein the photovoltaic-absorber layer is operable to absorb incident light at both the top side and the bottom side of the photovoltaic-absorber layer.
2 . The photovoltaic cell of claim 1 , wherein the bottom transparent-conducting oxide layer comprises AZO (Al 2 O 3 doped ZnO) or ITO (Indium Tin Oxide or tin-doped oxide).
3 . The photovoltaic cell of claim 1 , wherein the photovoltaic-absorber layer comprises one or more of a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer or a Copper-Indium-Gallium-Diselenide (CIGS) material layer.
4 . The photovoltaic cell of claim 1 , further comprising a buffer layer positioned between the photovoltaic-absorber layer and the top transparent-conducting-oxide layer.
5 . The photovoltaic cell of claim 4 , wherein the buffer layer comprises an n-type semiconducting material.
6 . The photovoltaic cell of claim 1 , further comprising an insulating layer positioned beneath the top transparent-conducting-oxide layer.
7 . The photovoltaic cell of claim 7 , wherein the insulating layer comprises a Zinc Oxide (ZnO) material layer.
8 . The photovoltaic cell of claim 1 , wherein the top side, the bottom side, or both sides of the photovoltaic-absorber layer are coated with a transparent protective layer.
9 . The photovoltaic cell of claim 8 , wherein the transparent protective layer comprises EVA.
10 . The photovoltaic cell of claim 1 , wherein the top transparent-conducting-oxide layer comprises AZO (Al 2 O 3 doped ZnO) or ITO (Indium Tin Oxide or tin-doped oxide).
11 . A solar-cell module system, comprising:
a plurality of photovoltaic cells of claim 1 arranged on a plane, having a front side and a back side; and
a reflective surface for directing incident light to the back side of the photovoltaic cells, wherein the plurality of photovoltaic cells are mounted at a fixed distance from the reflective surface by a mounting structure;
wherein the photovoltaic cells receive incident light on the front side from a natural source and receive incident light on the back side from the reflective surface.
12 . A photovoltaic cell, comprising:
a substrate;
a top chalcogenide photovoltaic-absorber layer having a top side and a bottom side, the bottom side being positioned over the substrate;
a bottom chalcogenide photovoltaic-absorber layer having a top side and a bottom side, the top side being positioned under the substrate;
a top transparent-conducting-oxide layer positioned over the top insulating layer, the top transparent-conducting-oxide layer having an exposed top surface; and
a bottom transparent-conducting-oxide layer positioned under the bottom insulating layer, the bottom transparent-conducting-oxide layer having an exposed bottom surface;
wherein the photovoltaic cell is operable to transmit incident light to both the top photovoltaic-absorber layer and the bottom photovoltaic-absorber layer, and wherein the top photovoltaic-absorber layer is operable to absorb incident light at the top side of the photovoltaic cell and the bottom photovoltaic-absorber layer is operable to absorb incident light at the bottom side of the photovoltaic cell.
13 . The photovoltaic cell of claim 12 , further comprising an insulating layer positioned over the top photovoltaic-absorber layer and an insulating layer positioned under the bottom photovoltaic-absorber layer.
14 . The photovoltaic cell of claim 12 , wherein the substrate is an electrically conducting substrate.
15 . The photovoltaic cell of claim 14 , wherein the electrically conducting substrate comprises stainless steel.
16 . The photovoltaic cell of claim 12 , wherein the substrate is an insulating substrate.
17 . The photovoltaic cell of claim 16 , wherein the substrate is coated with conducting layers on both top and bottom surfaces.
18 . The photovoltaic cell of claim 12 , wherein a barrier layer is coated on both sides of the substrate.
19 . The photovoltaic cell of claim 18 , wherein the barrier is comprised of one of Chromium (Cr), Molybdenum (Mo) or Copper (Cu).
20 . The photovoltaic cell of claim 12 , wherein the top and bottom photovoltaic-absorber layers are comprised of one or more of a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer or a Copper-Indium-Gallium-Diselenide (CIGS) material layer.
21 . The photovoltaic cell of claim 12 , wherein the top and bottom transparent-conducting-oxide layers are comprised of AZO (Al 2 O 3 doped ZnO) or ITO (Indium Tin Oxide or tin-doped oxide).