Programming non-volatile memory with variable initial programming pulse
View Patent ↗Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of the non-volatile storage elements to a set of target conditions using programming pulses. For at least a subset of the programming processes, a programming pulse associated with achieving an intermediate result for a respective programming process is identified, a pulse increment between programming pulses is decreased for the respective programming process while continuing the respective programming process to program non-volatile storage elements to the respective one or more targets and the identified programming pulse is used to adjust a starting programming voltage for a subsequent programming process.
1. A method for programming non-volatile storage, comprising:
performing multiple programming processes for a plurality of non-volatile storage elements, each of the programming processes operate to program at least a subset of the non-volatile storage elements to a respective set of target conditions using programming pulses; and
for at least a subset of the programming processes: identifying a programming pulse associated with achieving an intermediate result for a respective programming process, decreasing a pulse increment between programming pulses for the respective programming process while continuing the respective programming process to program non-volatile storage elements to respective one or more target conditions, and using the identified programming pulse to adjust a starting program voltage for a subsequent programming process for the non-volatile storage elements.
2. The method of claim 1 , wherein:
once started, each programming process for a particular set of non-volatile storage elements is completed prior to programming other non-volatile storage elements.
3. The method of claim 1 , wherein:
the intermediate result is an intermediate threshold voltage level that is lower than threshold voltage levels used to lockout non-volatile storage elements from programming due to respective programming pulses.
4. The method of claim 1 , wherein:
the respective programming process is performed for first user data; and
the subsequent programming process is performed for second user data.
5. The method according to claim 1 , wherein:
the respective programming process is an earlier stage of a multi-stage programming process for a first group of non-volatile storage elements;
the subsequent programming process is a later stage of the multi-stage programming process; and
the method further includes programming non-volatile storage elements other than the first group of non-volatile storage elements subsequent to the earlier stage of the multi-stage programming process and prior to the later stage of the multi-stage programming process.