Sputtering target, method for manufacturing sputtering target, and method for forming thin film
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
1. A method for manufacturing a sputtering target comprising the steps of:
obtaining a mixed material by mixing an InO X raw material, a MO Y raw material, and a ZnO Z raw material, M being one of Ga, Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;
forming an In-M-Zn—O compound powder by performing a first baking to the mixed material and then grinding the mixed material;
spreading part of the In-M-Zn—O compound powder in a mold;
forming a compound film by performing a second baking and a first pressure treatment on the part of the In-M-Zn—O compound powder spread in the mold;
spreading another part of the In-M-Zn—O compound powder over the compound film in the mold; and
performing a third baking and a second pressure treatment on the another part of the In-M-Zn—O compound powder and the compound film in the mold,
wherein the first baking is performed in a first atmosphere and then in a second atmosphere,
wherein the first atmosphere is an inert atmosphere or a reduced-pressure atmosphere, and
wherein the second atmosphere is an oxidation atmosphere.
2. The method for manufacturing a sputtering target according to claim 1 , wherein the In-M-Zn—O compound powder is mixed with water, a dispersant, and a binder, and
wherein the In-M-Zn—O compound powder is spread in the mold as a slurry.
3. The method for manufacturing a sputtering target according to claim 1 , wherein a plate-like compound is obtained by increasing a thickness of the compound film until the thickness reaches a thickness comprised between 2 mm and 20 mm.
4. The method for manufacturing a sputtering target according to claim 3 , wherein the plate-like compound is subjected to baking at a temperature higher than or equal to 1000° C. and lower than or equal to 1500° C.
5. The method for manufacturing a sputtering target according to claim 1 , wherein a plate-like compound is obtained by increasing a thickness of the compound film until the thickness reaches a thickness comprised between 2 mm and 20 mm, the method further comprising:
attaching the plate-like compound to a backing plate.
6. The method for manufacturing a sputtering target according to claim 5 , wherein the plate-like compound is subjected to baking at a temperature higher than or equal to 1000° C. and lower than or equal to 1500° C. before being attached to the backing plate.
7. The method for manufacturing a sputtering target according to claim 1 , wherein the InO X raw material, the MO Y raw material, and the ZnO Z raw material are mixed in a predetermined ratio, the predetermined ratio being one of 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, and 3:1:2 in a molar ratio, and M being one of Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
8. The method for manufacturing a sputtering target according to claim 1 , wherein the InO X raw material, the MO Y raw material, and the ZnO Z raw material are mixed in a predetermined ratio, the predetermined ratio being one of 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, and 3:1:2 in a molar ratio, and M being Ga.
9. A method for manufacturing a sputtering target comprising the steps of:
obtaining a mixed material by mixing an InO X raw material, a MO Y raw material, and a ZnO Z raw material, M being one of Ga, Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;
forming an In-M-Zn—O compound powder by performing a first baking to the mixed material and then grinding the mixed material;
spreading part of the In-M-Zn—O compound powder in a mold;
forming a compound film by performing a second baking and a first pressure treatment on the part of the In-M-Zn—O compound powder spread in the mold;
spreading another part of the In-M-Zn—O compound powder over the compound film in the mold; and
performing a third baking and a second pressure treatment on the another part of the In-M-Zn—O compound powder and the compound film in the mold,
wherein the second baking is performed in a first atmosphere and then in a second atmosphere,
wherein the first atmosphere is an inert atmosphere or a reduced-pressure atmosphere, and
wherein the second atmosphere is an oxidation atmosphere.
10. The method for manufacturing a sputtering target according to claim 9 , wherein the In-M-Zn—O compound powder is mixed with water, a dispersant, and a binder, and
wherein the In-M-Zn—O compound powder is spread in the mold as a slurry.
11. The method for manufacturing a sputtering target according to claim 9 , wherein a plate-like compound is obtained by increasing a thickness of the compound film until the thickness reaches a thickness comprised between 2 mm and 20 mm.
12. The method for manufacturing a sputtering target according to claim 11 , wherein the plate-like compound is subjected to baking at a temperature higher than or equal to 1000° C. and lower than or equal to 1500° C.
13. The method for manufacturing a sputtering target according to claim 9 , wherein a plate-like compound is obtained by increasing a thickness of the compound film until the thickness reaches a thickness comprised between 2 mm and 20 mm, the method further comprising:
attaching the plate-like compound to a backing plate.
14. The method for manufacturing a sputtering target according to claim 13 , wherein the plate-like compound is subjected to baking at a temperature higher than or equal to 1000° C. and lower than or equal to 1500° C. before being attached to the backing plate.
15. The method for manufacturing a sputtering target according to claim 9 , wherein the InO X raw material, the MO Y raw material, and the ZnO Z raw material are mixed in a predetermined ratio, the predetermined ratio being one of 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, and 3:1:2 in a molar ratio, and M being one of Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
16. The method for manufacturing a sputtering target according to claim 9 , wherein the InO X raw material, the MO Y raw material, and the ZnO Z raw material are mixed in a predetermined ratio, the predetermined ratio being one of 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, and 3:1:2 in a molar ratio, and M being Ga.