Semiconductor integrated circuit adapted to output pass/fail results of internal operations

1. A nonvolatile semiconductor memory device comprising:

a plurality of memory cells or a plurality of memory cell units each including a plurality of memory cells; and

a memory cell array including the plurality of memory cells or the plurality of memory cell units, being arranged to form an array;

wherein a first operation is performed in response to an input of a first command or an input of a first command sequence, and after the input of the first command or the input of the first command sequence, a first ready/busy signal goes from a ready state to a busy state in a first timing, and then the first ready/busy signal goes from a busy state to a ready state in a second timing before the first operation is completed, and the first operation includes an operation in which data stored in a selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed from first data to second data;

wherein a second operation is performed in response to an input of a second command or an input of a second command sequence, and after the input of the second command or the input of the second command sequence, the first ready/busy signal goes from a ready state to a busy state in a third timing, and then the first ready/busy signal is kept to a busy state until the first operation is completed, and the second operation includes an operation in which data stored in a selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed from the first data to the second data; and

wherein the first command is different from the second command, the first command sequence is different from the second command sequence, and the first data is different from the second data.

2. The nonvolatile semiconductor memory device according to claim 1 , wherein a period between the first timing and a timing of the input of the first command or the input of the first command sequence is the same as a period between the third timing and a timing of the input of the second command or the input of the second command sequence.

3. The nonvolatile semiconductor memory device according to claim 1 , wherein the input of the first command sequence includes command input, address input, and data input, and the input of the second command sequence includes command input, address input, and data input.

4. The nonvolatile semiconductor memory device according to claim 1 , wherein after the input of the first command or the input of the first command sequence, a second ready/busy signal goes from a ready state to a busy state, and then the second ready/busy signal is kept to a busy state until the first operation is completed;

wherein after the input of the second command or the input of the second command sequence, the second ready/busy signal goes from a ready state to a busy state, and then the second ready/busy signal is kept to a busy state until the second operation is completed; and

wherein the second ready/busy signal is different from the first ready/busy signal.

5. The nonvolatile semiconductor memory device according to claim 4 , wherein when the first operation is performed, the first ready/busy signal and the second ready/busy signal change from a busy state to a ready state in different timings; and

wherein when the second operation is performed, the first ready/busy signal and the second ready/busy signal change from a busy state to a ready state in the same timing.

6. The nonvolatile semiconductor memory device according to claim 4 , wherein when the first operation is performed, the first ready/busy signal and the second ready/busy signal change from a ready state to a busy state in the same timing; and

wherein when the second operation is performed, the first ready/busy signal and the second ready/busy signal change from a ready state to a busy state in the same timing.

7. The nonvolatile semiconductor memory device according to claim 4 , further comprising an output circuit, wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal to outside of the nonvolatile semiconductor memory device.

8. The nonvolatile semiconductor memory device according to claim 4 , further comprising an output circuit, wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal simultaneously to outside of the nonvolatile semiconductor memory device.

9. The nonvolatile semiconductor memory device according to claim 8 , wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal simultaneously from I/O pads to outside of the nonvolatile semiconductor memory device.

10. The nonvolatile semiconductor memory device according to claim 1 , wherein the output circuit is capable of outputting the first ready/busy signal from a ready/busy state output pad other than an I/O pad to outside of the nonvolatile semiconductor memory device.

11. The nonvolatile semiconductor memory device according to claim 1 , wherein the first operation is performed in response to the input of the first command or the input of the first command sequence, and after the input of the first command or the input of the first command sequence, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal goes from a busy state to a ready state before the first operation is completed, and after the first ready/busy signal goes from a busy state to a ready state, the second command or the second command sequence is input, and then the second operation is performed in response to the input of the second command or the input of the second command sequence, and after the input of the second command or the input of the second command sequence, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal is kept to a busy state until the second operation is completed.

12. The nonvolatile semiconductor memory device according to claim 1 , wherein a plurality of the first operations are performed successively in response to a plurality of inputs of the first command or the input of the first command sequence, and after a last input of the first command or the input of the first command sequence, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal goes from a busy state to a ready state before the first operation is completed, and after the first ready/busy signal goes from a busy state to a ready state, the second command or the second command sequence is input, and then the second operation is performed in response to the input of the second command or the input of the second command sequence, and after the input of the second command or the input of the second command sequence, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal is kept to a busy state until the second operation is completed.

13. The nonvolatile semiconductor memory device according to claim 1 , further comprising:

a plurality of data cache circuits; and

a plurality of first latch circuits connected to the plurality of data cache circuits, the plurality of first latch circuits configured to latch data to be programmed to the memory cells;

wherein third data are input to the plurality of data cache circuits before the first operation, and the third data are transferred from the plurality of data cache circuits to the plurality of first latch circuits in the first operation and then the third data are stored in at least a portion of the plurality of memory cells or the plurality of memory cell units before the first operation is completed.

14. The nonvolatile semiconductor memory device according to claim 13 , wherein the third data are transferred from the plurality of data cache circuits to the plurality of first latch circuits between the first timing and the second timing.

15. The nonvolatile semiconductor memory device according to claim 1 , wherein data stored in the selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed after the second timing and before the first operation is completed.

16. The nonvolatile semiconductor memory device according to claim 1 , wherein the memory cell array includes the plurality of memory cell units being arranged to form an array, the memory cell unit includes a plurality of memory cells connected in series, a first select gate transistor and a second select gate transistor, the plurality of memory cells connected in series is located between a source or a drain of the first select gate transistor and a source or a drain of the second select gate transistor.

17. The nonvolatile semiconductor memory device according to claim 1 , wherein when data stored in a selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed from the first data to the second data, a threshold voltage of the selected memory cell is caused to shift in the positive direction.

18. A nonvolatile semiconductor memory device comprising:

a plurality of memory cells or a plurality of memory cell units each including a plurality of memory cells; and

a memory cell array including the plurality of memory cells or the plurality of memory cell units, being arranged to form an array;

wherein a first operation including a first program operation is performed in response to an input of a first command, address input, data input, and an input of a second command, and after the input of the first command, the address input, the data input, and the input of the second command, a first ready/busy signal goes from a ready state to a busy state in a first timing, and then the first ready/busy signal goes from a busy state to a ready state in a second timing before the first operation is completed;

wherein a second operation including a second program operation is performed in response to an input of a first command, address input, data input, and an input of a third command, and after the input of the first command, the address input, the data input, and the input of the third command, the first ready/busy signal goes from a ready state to a busy state in a third timing, and then the first ready/busy signal is kept to a busy state until the first operation is completed; and

wherein the second command is different from the third command.

19. The nonvolatile semiconductor memory device according to claim 18 , wherein a period between the first timing and a timing of the input of the first command or the input of the first command sequence is the same as a period between the third timing and a timing of the input of the second command or the input of the second command sequence.

20. The nonvolatile semiconductor memory device according to claim 18 , wherein after the input of the first command, the address input, the data input, and the input of the second command, a second ready/busy signal goes from a ready state to a busy state, and then the second ready/busy signal is kept to a busy state until the first operation is completed;

wherein after the input of the first command, the address input, the data input, and the input of the third command, the second ready/busy signal goes from a ready state to a busy state, and then the second ready/busy signal is kept to a busy state until the second operation is completed; and

wherein the second ready/busy signal is different from the first ready/busy signal.

21. The nonvolatile semiconductor memory device according to claim 20 , wherein when the first operation is performed, the first ready/busy signal and the second ready/busy signal change from a busy state to a ready state in different timings; and

wherein when the second operation is performed, the first ready/busy signal and the second ready/busy signal change from a busy state to a ready state in the same timing.

22. The nonvolatile semiconductor memory device according to claim 20 , wherein when the first operation is performed, the first ready/busy signal and the second ready/busy signal change from a ready state to a busy state in the same timing; and

wherein when the second operation is performed, the first ready/busy signal and the second ready/busy signal change from a ready state to a busy state in the same timing.

23. The nonvolatile semiconductor memory device according to claim 20 , further comprising an output circuit, wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal to outside of the nonvolatile semiconductor memory device.

24. The nonvolatile semiconductor memory device according to claim 20 , further comprising an output circuit, wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal simultaneously to outside of the nonvolatile semiconductor memory device.

25. The nonvolatile semiconductor memory device according to claim 24 , wherein the output circuit is capable of outputting both the first ready/busy signal and the second ready/busy signal simultaneously from I/O pads to outside of the nonvolatile semiconductor memory device.

26. The nonvolatile semiconductor memory device according to claim 18 , wherein the output circuit is capable of outputting the first ready/busy signal from a ready/busy state output pad other than an I/O pad to outside of the nonvolatile semiconductor memory device.

27. The nonvolatile semiconductor memory device according to claim 18 , wherein the first operation is performed in response to the input of the first command, the address input, the data input, and the input of the second command, and after the input of the first command, the address input, the data input, and the input of the second command, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal goes from a busy state to a ready state before the first operation is completed, and after the first ready/busy signal goes from a busy state to a ready state, the input of the first command, the address input, the data input, and the input of the third command are performed, and then the second operation is performed in response to the input of the first command, the address input, the data input, and the input of the third command, and after the input of the first command, the address input, the data input, and the input of the third command, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal is kept to a busy state until the second operation is completed.

28. The nonvolatile semiconductor memory device according to claim 18 , wherein a plurality of the first operations are performed successively in response to a plurality of inputs of the first command, the address inputs, the data inputs, and the inputs of the second command, and after last input of the first command, last address input, last data input, and last input of the second command, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal goes from a busy state to a ready state before the first operation is completed, and after the first ready/busy signal goes from a busy state to a ready state, the input of the first command, the address input, the data input, and the input of the third command are performed, and then the second operation is performed in response to the input of the first command, the address input, the data input, and the input of the third command, and after the input of the first command, the address input, the data input, and the input of the third command, the first ready/busy signal goes from a ready state to a busy state, and then the first ready/busy signal is kept to a busy state until the second operation is completed.

29. The nonvolatile semiconductor memory device according to claim 18 , further comprising:

a plurality of data cache circuits; and

a plurality of first latch circuits connected to the plurality of data cache circuits, the plurality of first latch circuits configured to latch data to be programmed to the memory cells;

wherein first data are input to the plurality of data cache circuits before the first operation, and the first data are transferred from the plurality of data cache circuits to the plurality of first latch circuits in the first operation and then the first data are programmed in at least a portion of the plurality of memory cells or the plurality of memory cell units before the first operation is completed.

30. The nonvolatile semiconductor memory device according to claim 29 , wherein the first data are transferred from the plurality of data cache circuits to the plurality of first latch circuits between the first timing and the second timing.

31. The nonvolatile semiconductor memory device according to claim 18 , wherein data stored in the memory cells programmed in the first operation are changed after the second timing and before the first operation is completed.

32. The nonvolatile semiconductor memory device according to claim 18 , wherein the memory cell array includes the plurality of memory cell units being arranged to form an array, the memory cell unit includes a plurality of memory cells connected in series, a first select gate transistor and a second select gate transistor, the plurality of memory cells connected in series is located between a source or a drain of the first select gate transistor and a source or a drain of the second select gate transistor.