Semiconductor memory device
A semiconductor memory device comprises: a semiconductor substrate; a memory cell array provided above the semiconductor substrate and including a plurality of memory cells that are stacked; a plurality of bit lines connected electrically to the plurality of memory cells; and a plurality of sense amplifiers connected to the bit lines via bit line connection lines. The bit line connection lines have every adjacent N lines (where N is an integer of 2 or more) as one group. The sense amplifiers are arranged in a number smaller than N in a first direction that the bit line connection lines extend. An M number of the sense amplifiers are arranged in a width of a P number of groups in a second direction intersecting the first direction. The M number being larger than the P number.
1. A semiconductor memory device, comprising:
a semiconductor substrate;
a memory cell array provided above the semiconductor substrate and including a plurality of memory cells that are stacked in a vertical direction extending away from the substrate;
a plurality of bit lines connected electrically to the plurality of memory cells; and
a plurality of sense amplifiers, wherein
each sense amplifier is connected to a respective bit line via a respective bit line connection line,
the bit line connection lines having every adjacent N lines (where N is an integer of 2 or more) as one group,
the sense amplifiers being arranged in a number smaller than N in a first direction that the bit line connection lines extend,
an M number (M is an integer of 1 or more) of the sense amplifiers being arranged in a width of a P number (P is an integer of 1 or more) of groups in a second direction intersecting the first direction,
each group of sense amplifiers corresponding to a respective group of bit line connection lines, the M number being larger than the P number, and
the memory cell array comprises a column of the sense amplifiers extending in the first direction, wherein the column includes sense amplifiers connected to bit line connection lines belonging to two adjacent groups.
2. The semiconductor memory device according to claim 1 , wherein
the sense amplifiers are arranged in the second direction with a pitch that is two-thirds (⅔) of an arrangement pitch of the groups,
a first, a second, and a third sense amplifier columns are arranged corresponding to a first group and a second group that are adjacent to one another,
the bit line connection lines included in the first group are connected to the sense amplifiers included in the first sense amplifier column and are connected to half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column, and
the bit line connection lines included in the second group are connected to the remaining half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column and are connected to the sense amplifiers included in the third sense amplifier column.
3. The semiconductor memory device according to claim 1 , wherein
the sense amplifiers arranged in the second direction are connected to the bit line connection lines connected to two corresponding positions in each of the groups,
and the device further comprises:
a control signal line extending in the second direction commonly connected to the sense amplifiers connected to the bit line connection lines at the corresponding positions in each of the groups; and
an output signal line extending in the first direction for transferring data read from the sense amplifiers.
4. The semiconductor memory device according to claim 3 , wherein
the control signal line is positioned between the sense amplifiers adjacent in the first direction, and
one bit line connection line to which one of the sense amplifiers adjacent in the first direction is connected and another bit line connection line to which the other of the sense amplifiers adjacent in the first direction is connected are set in the same position within the different groups.
5. The semiconductor memory device according to claim 4 , further comprising:
a plurality of control signal lines connected to different sense amplifiers in the first direction respectively; and
a switching signal line for switching the control signal lines.
6. The semiconductor memory device according to claim 3 , wherein
the sense amplifiers connected to the bit line connection lines at corresponding positions in different groups are disposed adjacently in the second direction, and
two of the sense amplifiers connected to the bit line connection lines at corresponding positions in different groups and disposed adjacently in the second direction are connected to the control signal line via a common contact.
7. A semiconductor memory device, comprising:
a semiconductor substrate;
a memory cell array provided above the semiconductor substrate and including a plurality of memory cells that are stacked in a vertical direction extending away from the substrate;
a plurality of bit lines connected electrically to the plurality of memory cells; and
a plurality of sense amplifiers, wherein
each sense amplifier is connected to a respective bit line via a respective bit line connection line,
the bit line connection lines having every adjacent N lines (where N is an integer of 2 or more) as one group,
each group of bit line connection lines corresponding to a respective group of sense amplifiers,
when a first direction is a direction that the bit line connection lines extend and a pitch of the sense amplifiers in the first direction is assumed to be O, sum of lengths of the sense amplifiers arranged in the first direction being smaller than N×O, and
the memory cell array comprises a column of the sense amplifiers extending in the first direction, wherein the column includes sense amplifiers connected to bit line connection lines belonging to two adjacent groups.
8. The semiconductor memory device according to claim 7 , wherein
the sense amplifiers are arranged in a second direction intersecting the first direction with a pitch that is two-thirds (⅔) of an arrangement pitch of the groups,
a first, a second, and a third sense amplifier columns are arranged corresponding to a first group and a second group that are adjacent to one another,
the bit line connection lines included in the first group are connected to the sense amplifiers included in the first sense amplifier column and are connected to half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column, and
the bit line connection lines included in the second group are connected to the remaining half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column and are connected to the sense amplifiers included in the third sense amplifier column.
9. The semiconductor memory device according to claim 7 , wherein
the sense amplifiers arranged in the second direction are connected to the bit line connection lines at two corresponding positions in each of the groups,
and the device further comprises:
a control signal line extending in the second direction commonly connected to the sense amplifiers connected to the bit line connection lines at the corresponding positions in each of the groups; and
an output signal line extending in the first direction for transferring data read from the sense amplifiers.
10. The semiconductor memory device according to claim 9 , wherein
the control signal line is positioned between the sense amplifiers adjacent in the first direction, and
one bit line connection line to which one of the sense amplifiers adjacent in the first direction is connected and another bit line connection line to which the other of the sense amplifiers adjacent in the first direction is connected are set in the same position within the different groups.
11. The semiconductor memory device according to claim 10 , further comprising:
a plurality of control signal lines connected to different sense amplifiers in the first direction respectively; and
a switching signal line for switching the control signal lines.
12. The semiconductor memory device according to claim 9 , wherein
the sense amplifiers connected to the bit line connection lines at corresponding positions indifferent groups are disposed adjacently in the second direction, and
two of the sense amplifiers connected to the bit line connection lines at corresponding positions in different groups and disposed adjacently in the second direction are connected to the control signal line via a common contact.
13. A semiconductor memory device, comprising:
a semiconductor substrate;
a memory cell array provided above the semiconductor substrate and including a plurality of memory cells that are stacked in a vertical direction extending away from the substrate;
a plurality of bit lines connected electrically to the plurality of memory cells; and
a plurality of sense amplifiers, wherein
each sense amplifier is connected to a respective bit line via a respective bit line connection line,
the bit line connection lines having every adjacent N lines (where N is an integer of 2 or more) as one group,
each group of bit line connection lines corresponding to a respective group of sense amplifiers,
the sense amplifiers being arranged in a number different from N in a first direction that the bit line connection lines extend, and
the memory cell array comprises a column of the sense amplifiers extending in the first direction, wherein the column includes sense amplifiers connected to bit line connection lines belonging to two adjacent groups.
14. The semiconductor memory device according to claim 13 , wherein
the sense amplifiers are arranged in a second direction intersecting the first direction with a pitch that is two-thirds (⅔) of an arrangement pitch of the groups,
a first, a second, and a third sense amplifier column are arranged corresponding to a first group and a second group that are adjacent to one another,
the bit line connection lines included in the first group are connected to the sense amplifiers included in the first sense amplifier column and are connected to half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column, and
the bit lines included in the second group are connected to the remaining half of the sense amplifiers among the sense amplifiers included in the second sense amplifier column and are connected to the sense amplifiers included in the third sense amplifier column.
15. The semiconductor memory device according to claim 13 , wherein
the sense amplifiers arranged in the second direction are connected to the bit line connection lines at two corresponding positions in each of the groups,
and the device further comprises:
a control signal line extending in the second direction commonly connected to the sense amplifiers connected to the bit line connection lines at the corresponding positions in each of the groups; and
an output signal line extending in the first direction for transferring data read from the sense amplifiers.
16. The semiconductor memory device according to claim 15 , wherein
the control signal line is positioned between the sense amplifiers adjacent in the first direction, and
one bit line connection line to which one of the sense amplifiers adjacent in the first direction is connected and another bit line connection line to which the other of the sense amplifiers adjacent in the first direction is connected are set in the same position within the different groups.
17. The semiconductor memory device according to claim 16 , further comprising:
a plurality of control signal lines connected to different sense amplifiers in the first direction respectively; and
a switching signal line for switching the control signal lines.