Methods of using temperature control devices in electron microscopy
Methods of using temperature control devices in electron microscopes. The temperature of the device structure may be controlled to extract information about reactions and processes that was previously unobtainable.
1. A method of determining temperature of at least one heat source element on a semiconductor temperature control device in an electron microscope using a temperature sense element, said method comprising:
(a) introducing a liquid or a gas environment to the semiconductor temperature control device and measuring conductivity or impedance of the temperature sense element, wherein the conductivity or impedance is a measure of the heat flux of the environment of at least one heat source element; and
(b) determining the temperature of the at least one heat source element from a measured temperature and the heat flux measurement determined using the temperature sense element,
wherein the at least one heat source element is positioned on top of a conductive membrane on the semiconductor temperature control device, and either:
(i) the at least one heat source element is the temperature sense element; or
(ii) the temperature sense element is a wire or thermocouple patterned in proximity of the conductive membrane.
2. The method of claim 1 , wherein the temperature sense element is a wire or thermocouple patterned on the conductive membrane.
3. The method of claim 1 , wherein the temperature sense element is a wire or thermocouple patterned off the conductive membrane but on the semiconductor temperature control device.
4. The method of claim 1 , wherein the semiconductor temperature control device comprises two heat source elements in a flanking position across the conductive membrane, with an observation region defined between the two heat source elements, and wherein the observation region is heatable.
5. The method of claim 1 , wherein the temperature of the temperature sense element decreases when the liquid or gas environment is introduced to the semiconductor temperature control device.
6. The method of claim 1 , wherein the temperature sense element is a platinum resistance thermometer.
7. The method of claim 1 , wherein the at least one heat source element comprises silicon carbide or a refractory metal selected from the group consisting of tungsten, niobium, tantalum, molybdenum, rhenium, osmium, iridium, rhodium, ruthenium, technetium, hafnium, zirconium, vanadium, chromium, platinum, palladium and alloys thereof.
8. A method of performing electrothermal analysis on a specimen in an electron microscope using a semiconductor temperature control device, said method comprising:
(a) positioning at least one electrical source element directly on a passivation layer which is positioned on top of a conductive membrane of the semiconductor temperature control device, wherein the semiconductor temperature control device further comprises at least one heat source element positioned between the conductive membrane and the passivation layer;
(b) positioning the specimen on the at least one electrical source element; and
(c) applying a thermal stimulus to the specimen while simultaneously monitoring at least one electrical property and imaging said specimen.
9. The method of claim 8 , wherein the conductive membrane is less than 1 micron in thickness.
10. The method of claim 8 , comprising at least two heat source elements that flank the conductive membrane observation region, wherein the membrane observation region is heatable.
11. The method of claim 8 , wherein the electrothermal analysis is performed in gas environments, liquid environments or in vacuum.
12. A method of observing quenching in an electron microscope, said method comprising:
(a) placing a specimen on a semiconductor temperature control device;
(b) raising the temperature of the specimen while simultaneously imaging the phase or morphology of the specimen;
(c) cooling the specimen to room temperature on the order of 10 4 ° C./sec, wherein the cooling occurs at a rate that is faster than the phase transition of the specimen; and
(d) imaging the specimen subsequent to cooling,
wherein the semiconductor temperature control device comprises a conductive membrane comprising at least one membrane observation region, and at least two heat source elements in contact with the conductive membrane such that the membrane observation region is heatable.
13. The method of claim 12 , wherein the at least two heat source elements flank the conductive membrane observation region.
14. The method of claim 12 , wherein the device comprises more than one membrane observation regions.