Hybrid silicon wafer
View Patent ↗A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6 , wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.
1. A hybrid silicon wafer which is a silicon wafer having a structure wherein a main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon.
2. The hybrid silicon wafer according to claim 1 , wherein bonding interfaces of the polycrystalline silicon prepared by the unidirectional solidification/melting method and the monocrystalline silicon are diffusion-bonded.
3. The hybrid silicon wafer according to claim 2 , wherein an area ratio of the monocrystalline silicon of the silicon wafer relative to an entire area of a surface of the silicon wafer is 30% or more.
4. The hybrid silicon wafer according to claim 3 , wherein purity of the polycrystalline silicon of the silicon wafer excluding gas components is 6N or higher, a total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less.
5. The hybrid silicon wafer according to claim 4 , wherein C and O as the gas components of the polycrystalline silicon of the silicon wafer are respectively 100 wtppm or less.
6. The hybrid silicon wafer according to claim 5 , wherein the wafer is a disk shape, and a diameter of the wafer is 400 mm or more.
7. The hybrid silicon wafer according to claim 1 , wherein an area ratio of the monocrystalline silicon of the silicon wafer relative to an entire area of a surface of the silicon wafer is 30% or more.
8. The hybrid silicon wafer according to claim 1 , wherein purity of the polycrystalline silicon of the silicon wafer excluding gas components is 6N or higher, a total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less.
9. The hybrid silicon wafer according to claim 8 , wherein C and O as the gas components of the polycrystalline silicon of the silicon wafer are respectively 100 wtppm or less.
10. The hybrid silicon wafer according to claim 1 , wherein the wafer is a disk shape, and an outer diameter of the wafer is 400 mm or more.