Methods of making and deposition methods using hafnium- or zirconium-containing compounds
Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.
1. A method of forming a metal-containing layer on a substrate, the method comprising:
a) providing a reaction chamber having at least one substrate disposed therein;
b) introducing into the reaction chamber a vapor comprising at least one compound selected from the group consisting of HfCl 3 (nPrCp), HfCl 3 (iBuCp), HfCl 3 (tBuCp), ZrCl 3 (nPrCp), ZrCl 3 (iBuCp), ZrCl 3 (iPrCp), and ZrCl 3 (tBuCp); and
c) contacting the vapor with the substrate to form a metal-containing layer on at least one surface of the substrate using a vapor deposition process.
2. The method of claim 1 , wherein the at least one compound is selected from the group consisting of HfCl 3 (nPrCp), HfCl 3 (tBuCp), ZrCl 3 (nPrCp), and ZrCl 3 (tBuCp).
3. The method of claim 1 , wherein the at least one compound is HfCl 3 (tBuCp).
4. The method of claim 3 , further comprising introducing into the reaction chamber at least one reaction gas, wherein the reaction gas is H 2 O.
5. The method of claim 3 , wherein the vapor deposition process is an atomic layer deposition process.
6. The method of claim 1 , further comprising introducing into the reaction chamber a vapor of a second precursor and directing the vapor to the substrate.
7. The method of claim 6 , wherein the second precursor comprises a metal selected from the group consisting of Ti, Ta, Bi, Hf, Zr, Pb, Nb, Mg, Al, Sr, Y, lanthanides, and combinations thereof.
8. The method of claim 1 , further comprising introducing into the reaction chamber at least one reaction gas.
9. The method of claim 8 , wherein the at least one reaction gas is selected from the group consisting of O 2 , H 2 O, O 3 , H 2 O 2 , carboxylic acid, and combinations thereof.
10. The method of claim 1 , wherein the vapor deposition process is a chemical vapor deposition process.
11. The method of claim 1 , wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.
12. The method of claim 1 , wherein the metal-containing layer is selected from the group consisting of HfO 2 , ZrO 2 , (Hf,Zr)O x , HfSiO x , HfSiON, HfO x N y , HfLa x O y , HfAl x O y , ZrAl x O y , ZrSi x O y , ZrSiON, ZrO x N y , ZrLa x O y , Pb(Zr,Ti)O 3 , HfY x O y , ZrY x O y , HfRE x O y , and ZrRE x O y ; wherein x and y are relative numbers ranging from greater than 0 to 5.
13. The method of claim 1 , wherein the at least one compound is HfCl 3 (nPrCp).
14. The method of claim 13 , further comprising introducing into the reaction chamber at least one reaction gas, wherein the reaction gas is H 2 O.
15. The method of claim 13 , wherein the vapor deposition process is an atomic layer deposition process.
16. The method of claim 1 , wherein the at least one compound is ZrCl 3 (nPrCp).
17. The method of claim 12 , further comprising introducing into the reaction chamber at least one reaction gas, wherein the reaction gas is H 2 O.
18. The method of claim 16 , wherein the vapor deposition process is an atomic layer deposition process.
19. The method of claim 1 , wherein the at least one compound is ZrCl 3 (tBuCp).
20. The method of claim 19 , further comprising introducing into the reaction chamber at least one reaction gas, wherein the reaction gas is H 2 O.