Charged particle beam device, position specification method used for charged particle beam device, and program
View Patent ↗Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.
1. A charged particle beam device comprising:
a deflector for deflectively scanning a charged particle beam,
a display unit for detecting particles generated by irradiation of the charged particle beam and displaying an image, and
a controller for controlling a deflection pattern of the charged particle beam, wherein the controller includes:
a first memory for storing a first image obtained by scanning a scanning region set outside an ion beam irradiation-prohibited region with an ion beam;
a second memory for storing a second image obtained by scanning a capturing region set so as to overlap with at least part of the irradiation-prohibited region and at least part of the scanning region with a charged particle beam other than an ion beam; and
means for complementarily superimposing the first and second image,
wherein the display unit displays a superimposed image obtained by superimposing the first and the second image, and
wherein a region of a sample to be processed with the ion beam is set within the superimposed image.
2. The charged particle beam device according to claim 1 , further comprising means for controlling the attitude of a sample stage, on the basis of an angle formed by the observation directions of the first image and the second image, if the observation direction of the first image based on the ion beam and the observation direction of the second image based the charged particle beam differ from each other.
3. The charged particle beam device according to claim 1 , wherein the deflection pattern of the ion beam is converted to the deflection pattern of the charged particle beam and vice versa, on the basis of an angle formed by the observation directions of the first image and the second image, a perpendicular line of a plane formed by the first observation direction and the second observation direction, and an angle formed by the deflection scanning directions of the ion beam or the charged particle beam other than the ion beam, if the observation direction of the first image based on the ion beam and the observation direction of the second image based the charged particle beam differ from each other.
4. The charged particle beam device according to claim 1 , wherein the first and second images are superimposed so that an image of a first position correction mark acquired from the first image and a second position correction mark acquired from the second image align with each other.
5. The charged particle beam device according to claim 4 , wherein the first and second images are superimposed on each other by moving one of the first and second images.
6. The charged particle beam device according to claim 4 , wherein the first and second images are superimposed on each other by expansionally transforming one of the first and second images.
7. The charged particle beam device according to claim 4 , wherein the first and second images are superimposed on each other by contractionally transforming one of the first and second images.
8. The charged particle beam device according to claim 4 , wherein the first and second images are superimposed on each other by rotationally transforming one of the first and second images.
9. The charged particle beam device according to claim 1 , wherein the processing position of a processing pattern for extracting a minuscule test piece from a sample mounted on the sample stage can be registered.
10. The charged particle beam device according to claim 1 , wherein a fabrication position of a protective film pattern for extracting a minuscule test piece from a sample mounted on the sample stage can be registered.
11. A position specification method used in a charged particle beam device provided with a deflector for deflectively scanning a charged particle beam, a display unit for detecting particles generated by irradiation of the charged particle beam and displaying an image, and a controller for controlling a deflection pattern of the charged particle beam, the method comprising the steps of:
acquiring a first image obtained by scanning a scanning region set outside an ion beam irradiation-prohibited region with an ion beam;
acquiring a second image by scanning a capturing region set so as to overlap with at least part of the irradiation-prohibited region and at least part of the scanning region with a charged particle beam other than an ion beam;
complementarily superimposing the first and the second image;
displaying a superimposed image obtained by superimposing the first image and the second image; and
setting a region of the sample to be processed with the ion beam within the superimposed image.
12. A program configured to allow a computer to execute position specification processing of a charged particle beam device provided with a deflector for deflectively scanning a charged particle beam, a display unit for detecting particles generated by irradiation of the charged particle beam and displaying an image, and a controller for controlling a deflection pattern of the charged particle beam, to perform the steps of:
acquiring a first image obtained by scanning a scanning region set outside an ion beam irradiation-prohibited region with an ion beam;
acquiring a second image by scanning a capturing region set so as to overlap with at least part of the irradiation-prohibited region and at least part of the scanning region with a charged particle beam other than an ion beam;
complementarily superimposing the first image and the second image;
displaying a superimposed image obtained by superimposing the first image and the second image; and
setting a region of the sample to be processed with the ion beam within the superimposed image.