Process for the production of solar cells comprising a selective emitter

1. A process for production of solar cells comprising a selective emitter with one-step diffusion, said process comprising: etching in a single etching step a phosphosilicate glass layer and an underlying silicon layer with a printed-on etching paste.

2. The process according to claim 1 , wherein said etching provides is and wherein said etching paste is a phosphoric acid-containing etching paste.

3. The process according to claim 1 , wherein the etching of said phosphosilicate glass layer and said underlying silicon layer produces a silicon surface having increased microroughness of the actual texture.

4. The process according to claim 1 , wherein said etching of said phosphosilicate glass layer and underlying silicon layer is performed after the surface of the silicon layer is textured with a pyramidal or amorphous structure, and said etching produces increased microroughness of the actual texture of said surface of the silicon layer.

5. The process according to claim 1 , comprising the following process steps:

I. Texturing of the surface of said silicon layer with KOH/isopropanol or HF/HNO3;

II. Phosphorus doping (˜35-40 Ω/sq diffusion of POCl 3 );

III. Local etching of the phosphosilicate glass layer and underlying silicon layer, producing a conductivity in the range ˜80-100 Ω/sq, and cleaning;

IV. phosphosilicate glass etching;

V. Deposition of the antireflective layer by means of plasma enhanced chemical vapor deposition of silicon nitride (SiN x );

VI. Screen printing for metallization of the surface (front) and back with subsequent sintering (co-firing); and

VII. Edge insulation.

6. The process according to claim 1 , comprising the following process steps:

I. Texturing of the surface of said silicon layer with KOH/isopropanol or HF/HNO 3 ;

II. phosphosilicate glass etching, 40 Ω/sq diffusion (POCl 3 );

III. phosphosilicate glass etching;

IV. Printing-on of Solar Etch®, Si etching, in order to obtain a resistance of 100 Ω/sq and cleaning with deionised water and/or 0.05% KoH solution;

V. Deposition of an antireflective coating by plasma enhanced chemical vapor deposition for the deposition of silicon nitride (SiN x );

VI. Screen printing on the front and back for metallization of the surface on the front and back with subsequent sintering; and

VII. Edge insulation.

7. The process according to claim 5 , wherein cleaning is carried out with deionised water and/or 0.05% KOH solution.

8. The process according to claim 5 , wherein back edge insulation is additionally carried out by an etching step.

9. The process of claim 1 , wherein the etching paste is a phosphoric acid-containing etching paste.

10. A solar cell comprising a selective emitter prepared by the process according to claim 2 .

11. The process of claim 9 , wherein said etching paste comprises phosphoric acid in an amount of 25 to 80% by weight.

12. The process according to claim 11 , wherein said etching paste comprising a solvent or solvent mixture in an amount of 20 to 40% by weight.

13. The process of claim 12 , wherein said solvent is selected from glycerol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dimethyl sulfoxide and gamma-butyrolactone, in each case in pure form or as a mixture.

14. The process of claim 11 , wherein said etching paste comprises at least one non-particulate thickener.

15. The process of claim 11 , wherein said etching paste comprises a non-particulate thickener selected from polyvinylpyrrolidone and hydroxypropylcellulose, in each case in pure form or as a mixture.

16. The process of claim 11 , wherein said etching paste comprises a particulate thickener selected from carbon black and low-melting wax particles, in each case in pure form or as a mixture.

17. The process of claim 11 , wherein said etching paste comprises a thickener in an amount of 20 -35% by weight.