On-demand nanoelectronics platform
View Patent ↗A reconfigurable device includes a first insulating layer, a second insulating layer, and a nanoscale quasi one- or zero-dimensional electron gas region disposed at an interface between the first and second insulating layers. The device is reconfigurable by applying an external electrical field to the electron gas, thereby changing the conductivity of the electron gas region. A method for forming and erasing nanoscale-conducting structures employs tools, such as the tip of a conducting atomic force microscope (AFM), to form local electric fields. The method allows both isolated and continuous conducting features to be formed with a length well below 5 nm.
1. A reconfigurable device comprising:
a first insulating layer;
a second insulating layer; and
a nanoscale quasi one- or zero-dimensional electron gas region disposed at an interface between the first and second insulating layers,
wherein the device
(A) is reconfigurable by applying an external electrical field to the electron gas to change the conductivity of the electron gas region and
(B) has a structure with characteristics selected from the group consisting of the following:
(i) said device further comprises at least one other nanoscale quasi one- or zero-dimensional electron gas region, wherein said at least two electron gas regions are configured in a substantially cross shape, and wherein the reconfigurable device is configured as a magnetic field sensor;
(ii) said first and second insulating layers include a polar insulating layer and a non-polar insulating layer, wherein the nanoscale quasi one- or zero-dimensional electron gas has a gap formed therein, and wherein the reconfigurable device is configured as a reconfigurable photodetector; and
(iii) the electron gas region comprises at least one memory cell, and wherein the reconfigurable device is configured as a memory device.
2. The reconfigurable device of claim 1 , further comprising at least one other nanoscale quasi one- or zero-dimensional electron gas region, wherein said at least two electron gas regions are configured in a substantially cross shape, and wherein the reconfigurable device is configured as a magnetic field sensor.
3. The reconfigurable device of claim 1 , wherein said first and second insulating layers include a polar insulating layer and a non-polar insulating layer, wherein the nanoscale quasi one- or zero-dimensional electron gas has a gap formed therein, and wherein the reconfigurable device is configured as a reconfigurable photodetector.
4. The reconfigurable device of claim 3 , further comprising a gate electrode disposed adjacent the gap.
5. The reconfigurable device of claim 3 , further comprising a plurality of quasi one-dimensional electron gas regions forming a plurality of nanowires each having a gap thereon, wherein the reconfigurable device is configured as a photodetector array.
6. The reconfigurable device of claim 1 , wherein said interface extends a few unit cells into one of the first or second insulating layers.
7. The reconfigurable device of claim 6 , wherein said interface extends about 3 unit cells into one of the first or second insulating layers.
8. The reconfigurable device of claim 1 , wherein the electron gas region comprises at least one memory cell, and wherein the reconfigurable device is configured as a memory device.
9. A method comprising:
forming a nanoscale quasi one- or zero-dimensional electron gas region disposed at an interface between a first and a second insulating layers; and
applying an external electrical field to the electron gas region to a conductivity of the electron gas region;
wherein the electron gas region is disposed within a reconfigurable device having a structure with characteristics selected from the group consisting of the following:
(i) said device further comprises at least one other nanoscale quasi one- or zero-dimensional electron gas region, wherein said at least two electron gas regions are configured in a substantially cross shape, and wherein the reconfigurable device is configured as a magnetic field sensor;
(ii) said first and second insulating layers include a polar insulating layer and a non-polar insulating layer, wherein the nanoscale quasi one- or zero-dimensional electron gas has a gap formed therein, and wherein said device is configured as a reconfigurable photodetector; and
(iii) the electron gas region comprises at least one memory cell, and wherein the reconfigurable device is configured as a memory device.
10. The method of claim 9 , wherein the first and a second insulating layers include a polar insulating layer and a non-polar insulating layer.
11. The method of claim 10 , further comprising:
forming a substantially T-shaped electron gas region at an interface between the polar insulating layer and the non-polar insulating layer;
erasing a center portion of the T-shaped electron gas region with an external electric field thereby forming a source terminal, a drain terminal, and a gate terminal;
forming a nanoscale wire between the source and drain contacts wherein the nanoscale wire is substantially narrower than the T-shaped electron gas region; and
forming a gap between the source and drain terminals to thereby form a reconfigurable transistor, comprising.
12. The method of claim 11 , wherein said forming a substantially T-shaped electron gas region comprises applying an external electric field to the interface at a first voltage, wherein said forming a nanoscale wire comprises applying an external electric field to the interface at a second voltage, wherein said forming a gap comprises applying an external electric field to the interface at a second voltage, wherein the first and second voltages are positive, wherein the third voltage is negative, and wherein the second and third voltages have values substantially smaller than that of the first voltage.
13. The method of claim 11 , wherein said applying an external electric field comprises applying an electric field from an atomic force microscope (AFM).