MOSFET and method for manufacturing the same
The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer comprising a semiconductor substrate, a buried insulating layer on the semiconductor substrate, and a semiconductor layer on the buried insulating layer; a gate stack on the semiconductor layer; a source region and a drain region in the semiconductor layer on both sides of the gate stack; and a channel region in the semiconductor layer and located between the source region and the drain region, wherein the MOSFET further comprises a back gate which is located in the semiconductor substrate and has a first doped region as a lower portion of the back gate and a second doped region as an upper portion of the back gate, and the second doped region of the back gate is self-aligned with the gate stack. The MOSFET can adjust a threshold voltage by changing doping type and doping concentration of the back gate.
1. A MOSFET, comprising
an SOI wafer comprising a semiconductor substrate, a buried insulating layer on the semiconductor substrate, and a semiconductor layer on the buried insulating layer;
a gate stack on the semiconductor layer;
a source region and a drain region in the semiconductor layer on both sides of the gate stack;
a channel region in the semiconductor layer and located between the source region and the drain region; and
a back gate located in the semiconductor substrate, the back gate having three regions including a first doped region as a lower portion of the back gate electrically connected to at least one conductive via, a second doped region as an upper portion of the back gate, and an anti-doped region in the second doped region of the back gate below the channel region,
wherein the second doped region of the back gate is self-aligned with the gate stack;
wherein the anti-doped region is self-aligned with the gate stack, and wherein an interface between the anti-doped region and the second doped region has a distance to outer side surfaces of the second doped region.
2. The MOSFET according to claim 1 , wherein the back gate has a doping type the same as or opposite to the type of the MOSFET.
3. The MOSFET according to claim 1 , wherein the back gate has a doping concentration of about 1×10 17 cm −3 to about 1×10 20 cm −3 .
4. The MOSFET according to claim 1 , wherein the second doped region of the back gate adjoins the buried insulating layer.
5. The MOSFET according to claim 1 , wherein the antidoped region has a doping type the same as or opposite to the type of the MOSFET.
6. The MOSFET according to claim 1 , wherein the antidoped region has a doping concentration lower than that of the back gate.
7. The MOSFET according to claim 6 , wherein the anti-doped region has a doping concentration of about 1×10 15 cm −3 to about 1×10 18 cm −3 .
8. The MOSFET according to claim 6 , wherein the distance increases with reduction of the gate length.