PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO 3 , wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions, and the A-site contains Bi 3+ as A-site compensation ions and the B-site contains Nb 5+ as B-site compensation ions.
1. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb 1-X Bi X )((TiZr) 1-Y Nb Y )O 3 , wherein:
X is 0.05 to 0.1; and
Y is 0.05 to 0.1.
2. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb 1-X Bi X )((TiZr) 1-Y Nb Y )O 3 , wherein:
X is 0.05 to 0.1; and
Y is 0.05 to 0.1 and X═Y.
3. The PBNZT ferroelectric film according to claim 1 , wherein the ferroelectric film has a pillar shape structure.
4. The PBNZT ferroelectric film according to claim 1 , wherein the ferroelectric film has a micro Vickers hardness of 600 to 1200 Hv.