Method of manufacturing a semiconductor device
One aspect is a method of manufacturing a semiconductor device and semiconductor device. One embodiment provides a plurality of modules. Each of the modules includes a carrier and at least one semiconductor chip attached to the carrier. A dielectric layer is applied to the modules to form a workpiece. The dielectric layer is structured to open at least one of the semiconductor chips. The workpiece is singulated to obtain a plurality of devices.
1. A method of manufacturing a device, comprising:
providing a first carrier and a second carrier that are not connected to each other;
attaching a first semiconductor chip to the first carrier;
attaching a second semiconductor chip to the second carrier;
laminating a dielectric layer on the first semiconductor chip and the second semiconductor chip;
structuring the dielectric layer open to at least the first semiconductor chip; and
separating the first carrier and the second carrier by dividing the dielectric layer.
2. The method of claim 1 , comprising making the first and second carriers of different materials.
3. The method of claim 1 , wherein the first and second semiconductor chips comprise different integrated circuits.
4. A method of manufacturing a device, comprising:
providing a first carrier and a second carrier that are not connected to each other;
attaching a first semiconductor chip to the first carrier to form a first module;
attaching a second semiconductor chip to the second carrier to form a second module;
forming a dielectric layer on the first semiconductor chip and the second semiconductor chip;
structuring the dielectric layer open to at least the first semiconductor chip; and
separating the first carrier and the second carrier by dividing the dielectric layer.
5. The method of claim 4 , wherein the dielectric layer is laminated on the first semiconductor chip and the second semiconductor chip.
6. The method of claim 4 , wherein the first semiconductor chip includes a first electrode on a first face and a second electrode on a second face.
7. The method of claim 6 , wherein the first electrode is positioned at an interface between the first semiconductor chip and the first carrier.
8. The method of claim 6 , wherein the first face is opposite the second face.
9. The method of claim 6 , comprising a third electrode on the second face.
10. The method of claim 6 , wherein the third electrode is a control electrode.
11. The method of claim 4 , comprising:
attaching a third semiconductor chip to the first carrier.
12. The method of claim 4 , comprising:
attaching the first module and the second module to a common carrier.
13. The method of claim 4 , comprising:
covering gaps between the first module and the second module with a template.
14. The method of claim 13 , comprising:
wherein the template is a prepreg foil.
15. The method of claim 4 , comprising:
coating the dielectric layer with a metal layer.
16. The method of claim 15 , wherein the metal layer is made of copper.
17. The method of claim 15 , wherein the dielectric layer is an electrically insulating polymer material.
18. The method of claim 15 , comprising:
structuring the dielectric layer and metal layer to provide openings to a second electrode and a control electrode.
19. The method of claim 15 , comprising:
structuring the metal layer to produce a footprint of the device.
20. The method of claim 19 , comprising:
structuring the metal layer using a photostructurable film.