Semiconductor device with stop layers and fabrication method using ceria slurry
View Patent ↗The present invention provides a method of fabricating a semiconductor device including forming stop layers ( 32 ) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film ( 34 ) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers ( 30 ) provided above a semiconductor substrate, silicon oxy-nitride films ( 32 ) provided on the metal layers, and an embedded layer ( 36 ) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.
1. A method of fabricating a semiconductor device comprising:
forming a first metal layer partially above a substrate;
etching the first metal layer and the substrate using a first mask to form first wiring layers and a trench in the substrate;
forming a first interlayer insulating film between and on the first wiring layers and planarizing the first interlayer insulating film so that the trench is filled and a top surface of the first interlayer insulating film is above the first wiring layers;
forming a second metal layer partially above the first interlayer insulating film, and forming silicon oxynitride on the second metal layer;
etching the silicon oxynitride and the second metal layer using a second mask to form second wiring layers partially above the first interlayer insulating film, and stop layers on the second wiring layers;
forming a cover film between and on the first layers, so that a top surface of the cover film above a region between stop layers is higher than top surfaces of the stop layers, wherein the first cover film comprises silicon dioxide; and
forming an embedded layer between the second wiring layers and stop layers, by polishing the cover film to the stop layers using chemical mechanical polishing (CMP).
2. The method of claim 1 , wherein polishing the cover film using CMP comprises a polishing pressure of 4.0 pounds per square inch (PSI), and a rotation of the semiconductor substrate of from 40 to 200 revolutions per minute (RPM).
3. A semiconductor device comprising:
a first interlayer insulating film provided above a semiconductor substrate and covering a first wiring layer formed on the surface of the semiconductor substrate and filling a trench in the substrate, wherein the first interlayer insulating film comprises a planar surface through which top surfaces of the first wiring layer are not exposed;
a second wiring layer formed on the first interlayer insulating film and stop layers formed on the second wiring layer, wherein the stop layers comprise silicon oxynitride;
an embedded layer formed on the first interlayer insulating film between the second wiring layer and stop layers and planarized to have a top surface substantially coplanar with top surfaces of the stop layers; and
a second interlayer insulating film formed on the stop layers and on the embedded layer.
4. A wireless communications device, said wireless communications device comprising:
a flash memory comprising:
a first interlayer insulating film provided above a semiconductor substrate and covering a first wiring layer formed on the surface of the semiconductor substrate and filling a trench in the substrate, wherein the first interlayer insulating film comprises a planar surface through which top surfaces of the first wiring layer are not exposed;
a second wiring layer formed on the first interlayer insulating film and stop layers formed on the second wiring layer, wherein the stop layers comprise silicon oxynitride;
an embedded layer formed on the first interlayer insulating film between the second wiring layer and stop layers and planarized to have a top surface substantially coplanar with top surfaces of the stop layers; and
a second interlayer insulating film formed on the stop layers and on the embedded layer;
a processor;
a communications component:
a transmitter;
a receiver; and
an antenna connected to the transmitter and the receiver.
5. The wireless communications device of claim 4 , wherein said flash memory is NAND flash memory.
6. The wireless communications device of claim 4 , wherein said flash memory is NOR flash memory.
7. The wireless communications device of claim 4 , wherein said flash memory utilizes mirror-bits technology.
8. A computing device comprising;
a processor;
an input component;
an output component;
a memory comprising:
a volatile memory; and
a flash memory comprising:
a first interlayer insulating film provided above a semiconductor substrate and covering a first wiring layer formed on the surface of the semiconductor substrate and filling a trench in the substrate, wherein the first interlayer insulating film comprises a planar surface through which top surfaces of the first wiring layer are not exposed;
a second wiring layer formed on the first interlayer insulating film and stop layers formed on the second wiring layer, wherein the stop layers comprise silicon oxynitride;
an embedded layer formed on the first interlayer insulating film between the second wiring layer and stop layers and planarized to have a top surface substantially coplanar with top surfaces of the stop layers; and
a second interlayer insulating film formed on the stop layers and on the embedded layer.
9. The computing device of claim 8 , wherein said computing device is a personal computer (PC).
10. The computing device of claim 8 , wherein said computing device is a personal digital assistant (PDA).
11. The computing device of claim 8 , wherein said computing device is a gaming system.
12. A portable media player comprising:
a processor;
a cache;
a user input component;
a coder-decoder component; and
a memory comprising:
a flash memory comprising:
a first interlayer insulating film provided above a semiconductor substrate and covering a first wiring layer formed on the surface of the semiconductor substrate and filling a trench in the substrate, wherein the first interlayer insulating film comprises a planar surface through which top surfaces of the first wiring layer are not exposed;
a second wiring layer formed on the first interlayer insulating film and stop layers formed on the second wiring layer, wherein the stop layers comprise silicon oxynitride;
an embedded layer formed on the first interlayer insulating film between the second wiring layer and stop layers and planarized to have a top surface substantially coplanar with top surfaces of the stop layers, and
a second interlayer insulating film formed on the stop layers and on the embedded layer.
13. The portable media player of claim 12 , wherein said portable media player is a portable music player.
14. The portable media player of claim 12 , wherein said portable media player is a portable video player.