Film forming method and film forming apparatus
A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.
1. A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be in a vacuum, the film forming method comprising:
a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and
a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more.
2. The film forming method of claim 1 , wherein in the second process, the silane-based gas, the hydrocarbon gas, and the nitriding gas are supplied at different timings from each other.
3. The film forming method of claim 2 , wherein in the second process, the silane-based gas is initially supplied before the hydrocarbon gas and the nitriding gas of the second process.
4. The film forming apparatus of claim 1 , wherein in the second process, the silane-based gas is initially supplied, and at the same time, one of the hydrocarbon gas and the nitriding gas is supplied with the silane-based gas.
5. The film forming method of claim 1 , wherein the first process comprises a hold period in which an exhaustion of the processing container is suspended while performing supply of the boron-containing gas.
6. The film forming method of claim 1 , wherein a purging process for exhausting remaining gas in the processing container is performed between two supply processes adjacent in time of each gas.
7. The film forming method of claim 1 , wherein the cycle including the first process and the second process is performed once or more.
8. The film forming method of claim 1 , wherein an intermediate process which forms a SiN film by performing a cycle of alternately supplying the silane-based gas and the nitriding gas once or more is performed between the first process and the second process.
9. The film forming method of claim 1 , wherein a processing temperature of each of the first and second processes is in a range of 500 to 700° C.
10. The film forming method of claim 1 , wherein the number of cycles x in the first process and the number of cycles y in the second process satisfy a relational equation 1/2≦x/y≦2.
11. The film forming method of claim 1 , wherein the boron-containing gas is one or more gases selected from a group consisting of BCl 3 , B 2 H 6 , BF 3 , B(CH 3 ) 3 , triethyl borate (TEB), Tri(dimethylamino)borane (TDMAB), and tetramethylammonium bromide (TMAB).
12. The film forming method of claim 1 , wherein the nitriding gas is one or more gases selected from a group consisting of ammonia (NH 3 ), nitrogen (N 2 ), dinitrogen monoxide (N 2 O), and nitrogen oxide (NO).
13. The film forming method of claim 1 , wherein the silane-based gas is one or more gases selected from a group consisting of dichlorosilane (DCS), hexachlorodisilane (HCD), monosilane (SiH 4 ), disilane (Si 2 H 6 ), hexamethyldisilazane (HMDS), tetrachlorosilane (TCS), disilylamine (DSA), trisilylamine (TSA), bis(tertiary-butylamino)silane (BTBAS), and diisopropylaminosilane (DIPAS).
14. The film forming method of claim 1 , wherein the hydrocarbon gas is one or more gases selected from a group consisting of acetylene, ethylene, methane, ethane, propane, and butane.