Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration

1. A device comprising:

a first electrode;

a second electrode vertically spaced from the first electrode;

a layer of voltage switchable dielectric (VSD) material that is positioned between the first electrode and the second electrode, the layer of VSD material being in contact with the second electrode, wherein the VSD material is triggerable to switch from a non-conductive state into a conductive state with application of energy that exceeds a designated threshold level;

a layer of electrically isolative material provided between the layer of VSD material and the first electrode; and

wherein the first electrode extends vertically into the layer of electrically isolative material so as to make contact with the layer of VSD material.

2. A substrate device comprising:

a grounding electrode;

a layer of voltage switchable dielectric (VSD) material overlaying the grounding electrode, wherein the VSD material is triggerable to switch from a non-conductive state into a conductive state with application of energy that exceeds a designated threshold level;

a layer of electrically isolative material formed over the layer of VSD material; and

a first electrode that extends in a vertical dimension through the layer of electrically isolative material to at least contact, but not extend through, the layer of VSD material, so as to provide a grounding path from the first electrode to the grounding electrode in presence of a transient electrical event that supplies energy in excess of the designated threshold to at least a portion of the layer of VSD material.

3. The substrate device of claim 2 , wherein the first electrode extends to make contact with the layer of VSD material without measurably affecting a thickness of the layer of VSD material by more than 20%.

4. The substrate device of claim 2 , wherein the first electrode extends to make contact with the layer of VSD material without measurably affecting a thickness of the layer of VSD material by more than 100 nanometers.

5. The substrate device of claim 2 , wherein the electrically isolative material is prepregnated material.

6. The substrate device of claim 2 , wherein the layer of VSD material includes either organic or inorganic high aspect ratio particles.

7. The substrate device of claim 2 , wherein the layer of VSD material includes carbon nanotubes.

8. A multi-layered substrate device comprising:

a plurality of core layers, including an interior core layer and an exterior core layer;

one or more grounding planes embedded within a thickness of the substrate device, between at least two core layers;

one or more layers of VSD material overlaying and in contact with the grounding plane, wherein the one or more layers of VSD material are triggerable to switch from a non-conductive state into a conductive state with an occurrence of an electrical transient event that exceeds a characteristic voltage;

one or more layers of electrically isolative material separating each of the one or more layers of VSD material from at least one of the core layers;

wherein the exterior core layer includes a grounding electrode and overlays one of the layers of electrically isolative material;

wherein the one or more layers of VSD material include an exterior layer of VSD material underlying the layer of electrically isolative material that underlies one of the exterior core layers;

wherein grounding electrode extends through the underlying layer of electrically isolative material to reach the underlying layer of VSD material, in order to enable at least a portion of conductive elements of the exterior core layer to be grounded when an electrical transient event occurs that exceeds the characteristic voltage of the layer of VSD material.

9. The multi-layered substrate device of claim 8 , wherein the electrically isolative material is epoxy impregnated glass cloth.