Wafer processing deposition shielding components

1. A lower shield for encircling a sputtering target and a substrate support in a substrate processing chamber, the processing chamber having a chamber body having a tapered inside surface, the lower shield comprising:

a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising:

a plurality of gas holes;

a bottom wall configured to surround the substrate support, the bottom wall comprising a notch; and

a top wall configured to surround a sputtering surface of the sputtering target, the top wall comprising:

an inner periphery facing inward and angled radially inward from vertical towards the bottom wall; and

an outer periphery facing outward, wherein the outer periphery extends to form a sloped step and the sloped step is configured to engage with the tapered inside surface of the chamber body, wherein the sloped step is angled radially outward from vertical and away from the bottom wall;

a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, the resting surface having a surface roughness of from about 10 to about 80 microinches and a plurality of slots, wherein the support ledge is above the bottom wall, and wherein the sloped step is above the support ledge;

a base plate extending radially inward from the bottom wall of the cylindrical band; and

a cylindrical inner band coupled with the base plate and configured to partially surround a peripheral edge of the substrate support.

2. The lower shield of claim 1 , wherein the sloped step is angled radially outward between 5 degrees and 10 degrees from vertical.

3. The lower shield of claim 2 , wherein the inner periphery is angled radially inward between about 2 degrees and about 5 degrees from vertical.

4. The lower shield of claim 1 , wherein the cylindrical inner band, the base plate, and the cylindrical outer band form a U-shaped channel.

5. The lower shield of claim 4 , wherein the cylindrical inner band comprises a height that is less than the height of the cylindrical outer band.

6. The shield of claim 5 , wherein the height of the cylindrical inner band is about one fifth of the height of the cylindrical outer band.

7. The lower shield of claim 1 , wherein the bottom wall has a notch.

8. The lower shield of claim 1 , wherein the cylindrical outer band, the top wall, the support ledge, the bottom wall, and the inner cylindrical band comprise a unitary structure.

9. The lower shield of claim 1 , wherein exposed surfaces of the lower shield are bead blasted to have a surface roughness of 175±75 microinches.

10. The lower shield of claim 1 , further comprising a twin-wire aluminum arc spray coating on a surface of the lower shield wherein the twin-wire aluminum arc spray coating comprise a surface roughness from about 600 to about 2300 microinches.

11. A lower shield for encircling a sputtering target and a substrate support in a substrate processing chamber, the processing having a chamber body having a tapered inside surface, the lower shield comprising:

a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising:

a plurality of gas holes;

a bottom wall configured to surround the substrate support, the bottom wall comprising a notch; and

a top wall configured to surround a sputtering surface of the sputtering target, the top wall comprising:

an inner periphery facing inward and angled radially inward between 2 degrees and 5 degrees from vertical towards the bottom wall; and

an outer periphery facing outward, wherein the outer periphery extends to form a sloped step and the sloped step is configured to engage with the tapered inside surface of the chamber body, wherein the sloped step is angled radially outward between 5 degrees and 10 degrees from vertical and away from the bottom wall;

a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, the resting surface having a surface roughness of from about 10 to about 80 microinches and a plurality of slots, wherein the support ledge is above the bottom wall, and wherein the sloped step is above the support ledge;

a base plate extending radially inward from the bottom wall of the cylindrical band; and

a cylindrical inner band coupled with the base plate and configured to partially surround a peripheral edge of the substrate support, wherein the cylindrical inner band has a height that is less than a height of the cylindrical outer band, wherein the cylindrical outer band, the top wall, the support ledge, the bottom wall, and the inner cylindrical band comprise a unitary structure, and wherein exposed surfaces of the lower shield are bead blasted to have a surface roughness of 175±75 microinches.

12. The lower shield of claim 11 , further comprising a twin-wire aluminum arc spray coating on a surface of the lower shield wherein the twin-wire aluminum arc spray coating comprise a surface roughness from about 600 to about 2300 microinches.

13. The lower shield of claim 11 , wherein the cylindrical inner band, the base plate, and the cylindrical outer band form a U-shaped channel.

14. The lower shield of claim 11 , wherein the bottom wall has a notch.

15. The lower shield of claim 11 , wherein the sloped step is angled radially outward 8 degrees from vertical.

16. The lower shield of claim 15 , wherein the inner periphery is angled radially inward 3.5 degrees from vertical.

17. The lower shield of claim 11 , wherein the cylindrical inner band has a height that is one fifth of the height of the cylindrical outer band.

18. The lower shield of claim 1 , wherein the lower shield comprises stainless steel or aluminum.

19. The lower shield of claim 11 , wherein the lower shield comprises stainless steel or aluminum.