Leakage current collection structure and a radiation detector with the same

1. A radiation detector, comprising:

a piece of semiconducting material,

on a surface of said piece of semiconducting material, a number of consecutive electrode strips configured to assume electric potentials of sequentially increasing absolute value,

a field plate that substantially covers a separation between a pair of adjacent electrode strips of said consecutive electrode strips, and an electric insulation layer between said field plate and said surface of said piece of semiconducting material;

wherein said field plate is configured to assume a bias potential that is smaller in absolute value than the electric potential of any of said pair of adjacent electrode strips; and wherein the radiation detector further comprises a hop-over connection that electrically couples said field plate to one of said consecutive electrode stripe that is not adjacent to said separation.

2. A radiation detector according to claim 1 , wherein said field plate comprises a gap to enable a further hop-over connection to couple a further field plate that covers a further separation between a further pair of adjacent electrode strips of said consecutive electrode strips on one side of said field plate to one of said electrode strips on the other side of said field plate.

3. A radiation detector according to claim 1 , comprising:

a number of consecutive field plates, each of them covering a separation between a respective pair of adjacent electrode strips of said consecutive electrode strips, and

a hop-over connection for each of said number of consecutive field plates, each hop-over connection coupling a respective field plate to one of said consecutive electrode strips that is not adjacent to the separation covered by the respective field plate;

wherein each of said hop-over connections is in the same direction with respect to the direction of said sequentially increasing absolute value of electric potentials of said consecutive electrode strips.

4. A radiation detector according to claim 3 , wherein each of said hop-over connections reaches over the same number of intermediate electrode strips.

5. A radiation detector according to claim 1 , wherein:

at least one point of said separation comprises a local doped region, and

an electric connection exists between said doped region and said field plate.

6. A radiation detector according to claim 1 , wherein:

said field plate comprises two sections separated from each other in the longitudinal direction of the field plate by a gap,

said hop-over connection comprises two bias potential connection branches, each branch reaching from a common point to an end of a different one of said two sections of said field plate defining said gap, and

said common point is located over and comprises an electric connection to said one of said consecutive electrode strips that is not adjacent to said separation.

7. A radiation detector according to claim 6 , wherein:

in a space left in the middle of said two branches, further two-branch bias potential connections exist forming a sequence of nested V's.

8. A radiation detector according to claim 1 , wherein:

the radiation detector is a droplet-formed drift detector,

at least some of said electrode strips are crescent-formed field electrodes that partially encircle an anode region of the droplet-formed drift detector.

9. A radiation detector according to claim 1 , wherein:

the radiation detector is a round drift detector,

at least some of said electrode strips are annular field electrodes that encircle an anode region of the round drift detector.

10. a radiation detector comprising:

a piece of semiconducting material,

on a surface of said piece of semiconducting material, a number of consecutive electrode strips configured to assume electric potentials of sequentially increasing absolute value, and

a field plate that substantially covers a separation between a pair of adjacent electrode strips of said consecutive electrode strips, and by an electric insulation layer between said field plate and said surface of said piece of semiconducting material;

wherein said field plate is configured to assume a bias potential that is smaller in absolute value than the electric potential of any of said pair of adjacent electrode strips, wherein:

said separation branches into at least two separation branches, between which a further one of said consecutive electrode strips is located,

said field plate branches in conformity with the branching separation, so that branches of said field plate cover respective separation branches.

11. A radiation detector according to claim 10 , wherein said further one of said consecutive electrode strips is crescent-formed, and wherein said further one of said consecutive electrode strips is shorter than said pair of adjacent electrode strips, so that said separation branches into two separation branches at each end of said further one of said consecutive electrode strips.

12. A method for detecting electromagnetic radiation, comprising:

guiding radiation-induced charge carriers towards a detection point in a piece of semiconducting material with an electric field induced within said piece of semiconducting material by the electric potentials of sequentially increasing absolute value in a number of consecutive electrode strips, and

collecting surface-generated charge carriers in a separation between a pair of adjacent ones of said electrode strips with the electric potential of a field plate that covers said separation and is electrically isolated from said separation;

wherein said electric potential of said field plate is smaller in absolute value than the electric potential of any of said pair of adjacent ones of said electrode strips, and

wherein said electric potential of said field plate is obtained by electrically coupling said field plate to one of said consecutive electrode strips that is not adjacent to said separation.