Reverse conducting IGBT

1. A semiconductor device, comprising:

a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, a drift region of the second conductivity type, and a first electrode, the first emitter region and the second emitter region arranged between the drift region and the first electrode and each connected to the first electrode;

a cell region comprising at least one device cell, the at least one device cell comprising a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric;

a second electrode electrically connected to the source region and the body region of the at least one device cell; and

a parasitic region of the first conductivity type;

wherein the parasitic region includes at least one section with charge carrier lifetime reduction means;

wherein the charge carrier lifetime reduction means is separated from the drift region by the parasitic region,

wherein the body region together with the drift region and the second emitter region form a first diode between the second electrode and the first electrode,

wherein the parasitic region together with the drift region and the second emitter region form a second diode between the second electrode and the first electrode, and

wherein a distance between the drift region and the charge carrier lifetime reduction means is such that upon applying between the first electrode and the second electrode a voltage corresponding to the voltage blocking capability of the semiconductor device a depletion region expanding in the drift region and the parasitic region does not reach the charge carrier lifetime reduction means.

2. The semiconductor device of claim 1 , wherein the charge carrier lifetime reduction means is configured such that the charge carrier lifetime in the at least one section of the parasitic region is less than 100 ns.

3. The semiconductor device of claim 1 , wherein the charge carrier lifetime reduction means is configured such that the charge carrier lifetime in the at least one section of the parasitic region is less than 10% of a charge carrier lifetime in the drift region.

4. The semiconductor device of claim 1 , wherein a charge carrier lifetime in at least one section of the parasitic region is shorter than in the body region of the at least one transistor cell.

5. The semiconductor device of claim 1 , wherein the parasitic region is electrically connected to the second electrode.

6. The semiconductor device of claim 1 , wherein the parasitic region is floating.

7. The semiconductor device of claim 1 , further comprising:

an edge termination structure; and

wherein the parasitic region is part of the edge termination structure.

8. The semiconductor device of claim 7 , wherein the parasitic region surrounds the cell region.

9. The semiconductor device of claim 1 , further comprising:

a semiconductor body in which the first and second emitter regions, the drift region, and the cell region are arranged;

a gate via or a gate pad above the semiconductor body; and

wherein the parasitic region is located below the gate via or the gate pad.

10. The semiconductor device of claim 1 , wherein the charge carrier lifetime reduction means comprises recombination centers.

11. The semiconductor device of claim 10 , wherein the recombination centers comprise crystal defects.

12. The semiconductor device of claim 11 , wherein the crystal defects are defects induced by implanting particles into the parasitic region.

13. The semiconductor device of claim 10 , wherein the recombination centers comprise heavy metal atoms.

14. The semiconductor device of claim 1 , wherein the charge carrier lifetime reduction means comprise at least one recombination region.

15. The semiconductor device of claim 14 , wherein the at least one recombination region is arranged in one of a trench in the parasitic region, and on top of the parasitic region.

16. The semiconductor device of claim 15 , wherein the recombination region includes an electrically conductive material.

17. The semiconductor device of claim 16 , wherein the electrically conductive material includes at least one of a metal or a metal-semiconductor alloy.

18. The semiconductor device of claim 17 , wherein the electrically conductive material includes at least one of aluminum, copper, a metal alloy, a metal-silicon alloy, and a silicide.

19. The semiconductor device of claim 1 , wherein the charge carrier lifetime reduction means comprises at least one trench in the parasitic region filled with a dielectric.

20. The semiconductor device of claim 1 , further comprising:

a plurality of device cells in the cell region;

an edge region of the cell region; and

wherein device cells along the edge region of the cell region do not comprise a source region.

21. The semiconductor device of claim 1 ,

wherein a length of the drift region is in a current flow direction, the current flow direction being a direction in which charge carriers flow through the drift region when the semiconductor device is in an on-state, and

wherein a lateral distance between the at least one parasitic region and the second emitter region in a direction perpendicular to the current flow direction corresponds to at least the length of the drift region.

22. The semiconductor device of claim 1 ,

wherein the second emitter region is disposed in the cell region, and

wherein the second emitter region forms a cathode of the first diode and forms a cathode of the second diode.