IP Library Granted Patent US 8,431,893
Granted Patent B2
US 8,431,893 · App. 13/530,797 · Granted Apr 30, 2013

Electron beam apparatus and electron beam inspection method

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Quick Facts
Patent No.
US 8,431,893
App. No.
13/530,797
Granted
Apr 30, 2013
Kind
B2
Abstract

An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

Claims (9)

1. An electron beam apparatus including a sample stage on which a sample is placed, and an electron optical system, the electron optical system comprising:

an electron gun that generates a primary electron beam;

an immersion objective lens that converges the primary electron beam on the sample;

an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam;

a reflecting member to which the secondary particle collides;

an assist electrode which is located under the reflecting member;

a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member; and

a center detector that is located above the reflecting member.

2. The electron beam apparatus according to claim 1 , wherein the E×B deflector is located under the assist electrode.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →