Granted Patent B2

US 8,546,232 · App. 13/533,487 · Granted Oct 1, 2013

Abstract

Claims (54)

1. A method of manufacturing a semiconductor device, comprising:

forming a sacrificial interlayer insulating film over a substrate;

forming a plurality of cylinder holes in the sacrificial interlayer insulating film positioned in each of a memory cell forming region and a compensation capacitance forming region having different planar surface areas;

forming lower electrodes so as to cover inner surface of the cylinder holes;

removing overall the sacrificial interlayer insulating film;

forming a capacitance insulating film and an upper electrode in order on all of the inner and outer surfaces of the lower electrodes;

forming a boron-doped silicon germanium film so as to fill up recesses of the upper electrodes;

forming an adhesive layer on the boron-doped silicon germanium film;

forming a metal film on the adhesive layer;

forming a mask film on the metal film over the memory cell forming region and the compensation capacitance forming region; and

etching the metal film, the adhesive layer, and the boron-doped silicon germanium film using the mask film as a mask, thereby removing the metal film, the adhesive layer, and the boron-doped silicon germanium film which are formed in a region other than the memory cell forming region and the compensation capacitance forming region.

2. The method according to claim 1 , wherein the metal film is a tungsten film.

3. The method according to claim 1 , wherein the adhesive layer is a boron-doped silicon film.

4. The method according to claim 1 , wherein a total thickness of the boron-doped silicon germanium film and the metal film is in a range of 120 to 350 nm.

5. The method according to claim 4 , wherein a thickness of the metal film is in a range of 20 to 250 nm.

6. The method according to claim 1 , wherein the step of forming a mask film comprises:

forming a photoresist film by spin coating; and

patterning the photoresist film by lithography to form the mask film.

7. The method according to claim 1 , wherein the step of removing comprises:

partially etching the metal film using the mask film as a mask; and

etching the adhesive layer and the boron-doped silicon germanium film using a remaining portion of the metal film as a mask.

8. The method according to claim 1 , further comprising forming an insulating film formed of a silicon film overall after the step of removing, a surface height of the insulating film is set higher than at least the metal film in the memory cell forming region and the compensation capacitance forming region.

9. The method according to claim 8 , further comprising:

flattening a surface of the insulating film to form an interlayer insulating film;

forming a through hole which passes through the interlayer insulating film;

forming a via plug in the through hole; and

forming on a surface of the interlayer insulating film an interconnection which is connected to the via plug.

10. A method of manufacturing a semiconductor device, comprising:

forming a sacrificial interlayer insulating film over a substrate;

forming a plurality of cylinder holes in the sacrificial interlayer insulating film positioned in each of a memory cell forming region and a compensation capacitance forming region having different planar surface areas;

forming a plurality of lower electrodes in the cylinder holes, respectively;

removing the sacrificial interlayer insulating film so that each of the lower electrodes includes an inner surface and an outer surface;

forming a capacitance insulating film on the inner and outer surfaces of each of the lower electrodes;

forming an upper electrode on the capacitance insulating film;

forming a boron-doped silicon germanium film to cover the upper electrode;

forming a metal film over the boron-doped silicon germanium film; and

performing a selective etching on the metal film and the boron-doped silicon germanium film to remove respective portions of the metal film and the boron-doped silicon germanium film which are formed over a region other than the memory cell forming region and the compensation capacitance forming region.

11. The method according to claim 10 , wherein the metal film is a tungsten film.

12. The method according to claim 10 , wherein a total thickness of the boron-doped silicon germanium film and the metal film is in a range of 120 to 350 nm.

13. The method according to claim 12 , wherein a thickness of the metal film is in a range of 20 to 250 nm.

14. The method according to claim 10 , further comprising forming a mask film over the metal film, the selective etching being performed by use of the mask film, and the forming the mask film comprising:

forming a photoresist film by spin coating over the metal film; and

patterning the photoresist film by lithography to form the mask film.

15. The method according to claim 14 , wherein the performing the selective etching comprises:

partially etching the metal film using the mask film as a mask; and

etching the boron-doped silicon germanium film using a remaining portion of the metal film as a mask.

16. The method according to claim 10 , further comprising forming an adhesive layer on the boron-doped silicon germanium film before forming the metal film.

17. The method according to claim 16 , wherein the adhesive layer is a boron-doped silicon film that is substantially free from germanium.

18. The method according to claim 17 , further comprising forming a mask film over the metal film, the selective etching being performed by use of the mask film, and the forming the mask film comprising:

forming a photoresist film by spin coating; and

patterning the photoresist film by lithography to form the mask film.

19. The method according to claim 18 , wherein the performing the selective etching, comprises:

partially etching the metal film using the mask film as a mask; and

etching the boron-doped silicon film and the boron-doped silicon germanium film using a remaining portion of the metal film as a mask.

Assignments (6)