Apparatus for reducing write minimum supply voltage for memory

1. An apparatus comprising:

a memory element having cross-coupled inverters coupled to a first supply node;

a power device coupled to the first supply node and a second supply node, the second supply node coupled to a power supply;

a first access device having a gate terminal coupled to a word-line, a first terminal coupled to the memory element, and a second terminal coupled to a first bit-line which is operable to be pre-discharged to a logical low level prior to write operation; and

a second access device having a gate terminal coupled to the word-line, a first terminal coupled to the memory element, and a second terminal coupled to a second bit-line which is operable to be pre-discharged to a logical low level prior to the write operation, wherein the first and second bit-lines are differential bit-lines, and wherein both the first and second bit-lines are operable to be pre-discharged to a logical low level prior to the write operation such that the power supply on the first supply node exhibits self-induced reduction.

2. The apparatus of claim 1 further comprises logic to pre-discharge the first bit-line prior to the write operation.

3. The apparatus of claim 2 , wherein the logic is operable to pre-discharge the first bit-line during a memory inactive state.

4. The apparatus of claim 1 further comprises a delay logic operable to delay assertion or de-assertion of the first bit-line relative to the word-line.

5. The apparatus of claim 1 , wherein the power device comprises a p-type device.

6. The apparatus of claim 1 , wherein the power device comprises a stack of p-type devices coupled together in series between the first supply node and the second supply node.

7. The apparatus of claim 1 , wherein the power device has a programmable resistance between the first power supply node and the second power supply node.

8. The apparatus of claim 1 , wherein the power device is operable to receive a pulse signal to turn off the power device when the first bit-line is pre-discharged to the logical low level during the write operation.

9. The apparatus of claim 1 , wherein the power device is operable to be turned on after the first bit-line transitions to a logical high level during the write operation.

10. The apparatus of claim 1 , wherein the memory element and the first and second access devices are part of a 6T Static Random Access Memory (SRAM) cell or part of an 8T SRAM cell.

11. The apparatus of claim 1 , wherein during normal operation, the second bit-line provides a signal which is an inverse of a signal provided by the first bit-line.

12. The apparatus of claim 1 , wherein the cross-coupled inverters comprise corresponding p-type devices with first terminals coupled to the first supply node and second terminals coupled to at least one of the first or second access devices.

13. An apparatus comprising:

a power device having a p-type transistor operable to supply power supply to a first supply node; and

an Static Random Access Memory (SRAM) coupled to the first supply node, the SRAM having at least two access devices having their corresponding gate terminals coupled to a word-line, the at least two access devices having their corresponding first terminals coupled to cross-coupled inverters of the SRAM, and the at least two access devices having their corresponding second terminals coupled to complementary bit-lines which are operable to be pre-discharged to a logical low level prior to write operation, wherein both bit-lines of the complementary bit-lines are operable to be pre-discharged to a logical low level prior to the write operation such that the power supply on the first supply node exhibits self-induced reduction.

14. The apparatus of claim 13 further comprises logic to pre-discharge the complementary bit-lines prior to the write operation.

15. The apparatus of claim 14 , wherein the logic is operable to pre-discharge the complementary bit-lines during a memory inactive state.

16. The apparatus of claim 13 , wherein the SRAM is a 6T SRAM or an 8T SRAM.

17. The apparatus of claim 13 , wherein during normal operation, the complementary bit-lines provide complementary signals.

18. The apparatus of claim 13 , wherein the power device is operable to receive a pulse signal to turn off the power device when the complementary bit-lines are pre-discharged to the logical low level during the write operation.

19. The apparatus of claim 13 , wherein the power device is operable to turn on after the complementary bit-lines transition to a logical high level during the write operation.

20. The apparatus of claim 13 further comprises delay logic operable to delay assertion or de-assertion of the complementary bit-lines relative to the word-line.

21. A system comprising:

a processor having memory comprising:

a memory element having cross-coupled inverters coupled to a first supply node;

a power device coupled to the first supply node and a second supply node, the second supply node coupled to a power supply;

a first access device having a gate terminal coupled to a word-line, a first terminal coupled to the memory element, and a second terminal coupled to a first bit-line which is operable to be pre-discharged to a logical low level prior to write operation; and

a second access device having a gate terminal coupled to the word-line, a first terminal coupled to the memory element, and a second terminal coupled to a second bit-line which is operable to be pre-discharged to a logical low level prior to the write operation, wherein the first and second bit-lines are differential bit-lines, and wherein both the first and second bit-lines are operable to be pre-discharged to a logical low level prior to the write operation such that the power supply on the first supply node exhibits self-induced reduction; and

a wireless interface communicatively coupled to the processor to allow the processor to communicate with other devices.

22. The system of claim 21 further comprises a display unit communicatively coupled to the processor.

23. The system of claim 21 , wherein the processor further comprises logic to pre-discharge the first and second bit-lines prior to the write operation.

24. The system of claim 23 , wherein the logic is operable to pre-discharge the first and second bit-lines during a memory inactive state.

25. The system of claim 21 , wherein the processor further comprises a delay logic operable to delay assertion or de-assertion of the first bit-line relative to the word-line.

26. A system comprising:

a processor having a memory comprising:

a power device having a p-type transistor to supply power supply to a first supply node; and

an Static Random Access Memory (SRAM) coupled to the first supply node, the SRAM having at least two access devices having their corresponding gate terminals coupled to a word-line, the at least two access devices having their corresponding first terminals coupled to cross-coupled inverters of the SRAM, and the at least two access devices having their corresponding second terminals coupled to complementary bit-lines which are operable to be pre-discharged to a logical low level prior to write operation, wherein both bit-lines of the complementary bit-lines are operable to be pre-discharged to a logical low level prior to the write operation such that the power supply on the first supply node exhibits self-induced reduction; and

a wireless interface communicatively coupled to the processor to allow the processor to communicate with other devices.

27. The system of claim 26 , wherein the processor further comprises logic to pre-discharge the complementary bit-lines prior to the write operation.

28. The system of claim 27 , wherein the logic is operable to pre-discharge the complementary bit-lines during a memory inactive state.

29. The system of claim 28 , wherein the SRAM is a 6T SRAM or an 8T SRAM.

30. The system of claim 26 further comprises a display unit communicatively coupled to the processor.

31. The apparatus of claim 4 , wherein the delay between the first bit-line and word-line is programmable.

32. The apparatus of claim 4 , wherein the delay unit is operable to set the delay between the first bit-line and the word-line in a range of 20% to 30% of a write clock phase.

33. The apparatus of claim 4 , wherein the delay unit comprises a multiplexer which is operable to select an inverting path over a non-inverting path.