Micromachined horn
View Patent ↗An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.
1. An acoustic device, comprising:
a transducer formed on a first surface of a substrate; and
an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate, and positioned to amplify sound waves from the transducer, the acoustic horn defining a non-linear, asymmetrical cross-sectional profile.
2. The acoustic device of claim 1 , wherein the cross-sectional profile comprises substantially exponential sidewalls.
3. The acoustic device of claim 1 , wherein the cross-sectional profile comprises stepped sidewalls.
4. The acoustic device of claim 1 , wherein the acoustic horn defines a mouth having a shape other than a square shape.
5. The acoustic device of claim 1 , wherein the shape of the mouth comprises one of a circle or an oval.
6. The acoustic device of claim 1 , wherein the transducer comprises a piezoelectric MEMS ultrasonic transducer (PMUT).
7. The acoustic device of claim 1 , wherein the transducer comprises a piezoelectric thin film between two metal layers.
8. The acoustic device of claim 1 , further comprising:
a thin film coated on interior walls of the acoustic horn.
9. The acoustic device of claim 8 , wherein the thin film comprises diamond for reducing sound absorption of the substrate within the acoustic horn.
10. The acoustic device of claim 8 , wherein the thin film comprises one of silicon nitride and silicon carbide.
11. An acoustic device, comprising:
a semiconductor substrate;
a piezoelectric ultrasonic transducer formed on a front surface of the substrate; and
an acoustic horn formed through a back surface of the substrate by a multi-step dryetching process, a throat of the acoustic horn being positioned adjacent to the transducer, wherein a cross-sectional profile of the acoustic horn comprises substantially exponential sidewalls.
12. The acoustic device of claim 11 , wherein the ultrasonic transducer comprises a piezoelectric MEMS ultrasonic transducer (PMUT).
13. The acoustic device of claim 11 , wherein the ultrasonic transducer comprises a piezoelectric thin film between two metal layers.
14. The acoustic device of claim 11 , further comprising: a thin film coated on interior walls of the acoustic horn.
15. The acoustic device of claim 14 , wherein the thin film comprises diamond for reducing sound absorption of the substrate within the acoustic horn.
16. The acoustic device of claim 14 , wherein the thin film comprises one of silicon nitride and silicon carbide.
17. An acoustic device comprising:
a semiconductor substrate;
a piezoelectric ultrasonic transducer formed on a front surface of the substrate; and
an acoustic horn formed through a back surface of the substrate by a dry-etching process, a throat of the acoustic horn being positioned adjacent to the transducer, wherein a cross-sectional profile of the acoustic horn comprises stepped sidewalls with at least two distinct angles,
wherein the stepped sidewalls of the acoustic horn are skewed with respect to one another, such that corresponding angles of opposite sides of the stepped sidewalls are different.
18. The acoustic device of claim 17 , further comprising:
a thin film coated on the stepped sidewalls of the acoustic horn, the thin film comprising one of diamond, silicon nitride and silicon carbide.