Radical oxidation process for fabricating a nonvolatile charge trap memory device
A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a polysilicon channel, and forming over the tunnel oxide layer a multi-layer charge storing layer comprising an oxygen-rich, first layer comprising a nitride, and an oxygen-lean, second layer comprising a nitride on the first layer. The substrate is then subjected to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer. The stoichiometric composition of the first layer results in it being substantially trap free, and the stoichiometric composition of the second layer results in it being trap dense. The second oxidation process can comprise a plasma oxidation process or a radical oxidation process using In-Situ Steam Generation.
1. A method of fabricating a memory device, comprising:
subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a channel connecting a source and a drain of the memory device formed in the substrate, wherein the channel comprises polysilicon;
forming a multi-layer charge storing layer overlying the tunnel oxide layer, the multi-layer charge storing layer comprising an oxygen-rich, first layer comprising a nitride on the tunnel oxide layer in which a stoichiometric composition of the first layer results in it being substantially trap free, and an oxygen-lean, second layer comprising a nitride on the first layer in which a stoichiometric composition of the second layer results in it being trap dense; and
subjecting the substrate to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer.
2. The method of claim 1 , wherein the second oxidation process comprises a plasma oxidation process.
3. The method of claim 2 , wherein the channel comprises recrystallized polysilicon.
4. The method of claim 1 , wherein the second oxidation process comprises an In-Situ Steam Generation (ISSG) process.
5. The method of claim 4 , wherein the channel comprises recrystallized polysilicon.
6. The method of claim 4 , wherein the channel comprises a silicon nanowire.
7. The method of claim 1 , wherein at least one of the first or second oxidation processes is a radical oxidation process comprising flowing hydrogen (H 2 ) and oxygen (O 2 ) gas into a process chamber, and forming radicals at a surface of the second oxynitride layer to consume a portion of the second layer and form the HTO layer without an ignition event to pyrolyze the H 2 and O 2 .
8. The method of claim 1 , wherein the first layer is separated from the second layer by an anti-tunneling layer comprising an oxide.
9. A method of fabricating a memory device, comprising:
subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a channel connecting a source and a drain of the memory device formed in the substrate, wherein the channel comprises polysilicon;
forming a multi-layer charge storing layer overlying the tunnel oxide layer, the multi-layer charge storing layer comprising a first layer comprising a nitride closer to the tunnel oxide layer, and a second layer comprising a nitride, wherein the first layer is separated from the second layer by an anti-tunneling layer comprising an oxide; and
subjecting the substrate to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer.
10. The method of claim 9 , wherein the second oxidation process comprises a plasma oxidation process.
11. The method of claim 10 , wherein the channel comprises recrystallized polysilicon.
12. The method of claim 9 , wherein the second oxidation process comprises an In-Situ Steam Generation (ISSG) process.
13. The method of claim 12 , wherein the channel comprises recrystallized polysilicon.
14. The method of claim 12 , wherein the channel comprises a silicon nanowire.
15. The method of claim 9 , wherein at least one of the first or second oxidation processes is a radical oxidation process comprising flowing hydrogen (H 2 ) and oxygen (O 2 ) gas into a process chamber, and forming radicals at a surface of the second oxynitride layer to consume a portion of the second layer and form the HTO layer without an ignition event to pyrolyze the H 2 and O 2 .
16. A method of fabricating a memory device, comprising:
forming on a surface of a substrate a stack of layers including at least a first dielectric layer, a gate layer and a second dielectric layer, wherein the gate layer is separated from the surface of the substrate by the first dielectric layer and the second dielectric layer is separated from the first dielectric layer by the gate layer;
forming an opening extending through the stack of layers to a first doped diffusion region formed on the surface of the substrate;
forming on sidewalls of the opening a high-temperature-oxide (HTO) layer;
forming on an inside sidewall of the HTO layer a multi-layer charge storing layer, the multi-layer charge storing layer comprising an oxygen-lean, first oxynitride layer on the HTO layer in which a stoichiometric composition of the first oxynitride layer results in it being trap dense, and an oxygen-rich, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free;
forming on an inside sidewall of the multi-layer charge storing layer a tunnel oxide layer; and
forming on an inside sidewall of the tunnel oxide layer a vertical channel comprising polysilicon,
wherein the vertical channel electrically couples first doped diffusion region to a second doped diffusion region formed in a layer of semiconducting material subsequently formed over the stack of layers and the opening.
17. The method of claim 16 , wherein the HTO layer is formed by a plasma oxidation process.
18. The method of claim 16 , wherein the HTO layer is formed by an In-Situ Steam Generation (ISSG) process.
19. The method of claim 16 , wherein the first oxynitride layer is separated from the second oxynitride layer by an anti-tunneling layer comprising an oxide, and wherein the HTO layer is formed by a plasma oxidation process.
20. The method of claim 16 , wherein the first oxynitride layer is separated from the second oxynitride layer by an anti-tunneling layer comprising an oxide, and wherein the HTO layer is formed by an In-Situ Steam Generation (ISSG) process.