Neutron detection using GD-loaded oxide and nitride heterojunction diodes
Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO 2 , Gd-doped EuO, Gd-doped GaN, Gd 2 O 3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li 2 B 4 O 7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.
1. A solid state neutron detector comprising a layer of a p-type semiconductor, an insulator and an n-type semiconductor, wherein at least one of said p or n-type layers comprises Gd in an amount of 3-30 atomic percent.
2. The solid state neutron detector of claim 1 , wherein said layer comprising Gd is a p-type layer.
3. The solid state neutron detector of claim 1 , wherein said layer comprising Gd is an n-type layer.
4. The solid state neutron detector of claim 1 , wherein said insulator is comprised of SiO 2 .
5. The solid state neutron detector of claim 1 , wherein said insulator comprises Gd in amounts of 3-30%.
6. A solid state neutron detector comprised of a layer of a Gd-doped semiconductor on one side of an insulator and a single crystal semiconducting layer of Li 2 B 4 O 7 on an opposing side of said insulator.
7. The solid state neutron detector of claim 6 , wherein said insulator comprises Gd.