Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices

1. A thick film paste composition comprising:

(a) 35-55 wt % Ag;

(b) 0.5-5 wt % lead-tellurium-lithium-titanium-oxide;

(c) 0-5 wt % inorganic additive selected from the group consisting of Bi 2 O 3 , TiO 2 , Al 2 O 3 , B 2 O 3 , SnO 2 , Sb 2 O 5 , Cr 2 O 3 , Fe 2 O 3 , ZnO, CuO, Cu 2 O, MNO 2 , CO 2 O 3 , NiO, RuO 2 , a metal that can generate a listed metal oxide during firing, a metal compound that can generate a listed metal oxide during firing, and mixtures thereof; and

(d) an organic medium;

wherein said Ag, said lead-tellurium-lithium-titanium-oxide and any of said inorganic additive are dispersed in said organic medium, said paste composition comprising less than 70 wt % of inorganic components comprising said Ag, said lead-tellurium-lithium -titanium-oxide and any of said inorganic additive, wherein said wt % are based on the total weight of said paste composition, said lead-tellurium-lithium-titanium-oxide comprising 25-65 wt % PbO, 25-70 wt % TeO 2 , 0.1-5 wt % Li 2 O, and 0.1-5 wt % TiO 2 ,

wherein said wt % are based on the total weight of said lead-tellurium-lithium-titanium-oxide.

2. The paste composition of claim 1 , said paste composition comprising 38-52wt % Ag and 1-3.5 wt % lead-tellurium-lithium-titanium-oxide, wherein said wt % are based on the total weight of said paste composition.

3. The paste composition of claim 1 , said lead-tellurium-lithium-titanium-oxide comprising 30-60 wt % PbO, 30-65 wt %TeO 2 , 0.25-3 wt % Li 2 O and 0.25-5 wt % TiO 2 ,

wherein said wt % are based on the total weight of said lead-tellurium-lithium-titanium-oxide.

4. The paste composition of claim 3 , said lead-tellurium-lithium-titanium-oxide comprising 30-50 wt % PbO, 50-65 wt % TeO 2 , 0.5-2.5 wt % Li 2 O and 0.5-3 wt % TiO 2 .

5. The paste composition of claim 1 , said paste composition comprising less than 60 wt % of inorganic components comprising said Ag, said lead-tellurium-lithium-titanium oxide and any of said inorganic additive.

6. The paste composition of claim 1 , comprising 0.5-5 wt % of said inorganic additive selected from the group consisting of Bi 2 O 3 , TiO 2 , Al 2 O 3 , B 2 O 3 , SnO 2 , Sb 2 O 5 , Cr 2 O 3 , Fe 2 O 3 , ZnO, CuO, Cu 2 O, MnO 2 , Co 2 O 3 , NiO, RuO 2 , a metal that can generate a listed metal oxide during firing, a metal compound that can generate a listed metal oxide during firing, and mixtures thereof, wherein said wt % are based on the total weight of said paste composition.

7. The paste composition of claim 6 , said paste composition comprising less than 60 wt % of inorganic components comprising said Ag, said lead-tellurium-lithium-titanium oxide and said inorganic additive.

8. The paste composition of claim 1 , said lead-tellurium-lithium-titanium-oxide further comprising an oxide selected from the group consisting of SiO 2 , SnO 2 , B 2 O 3 , ZnO, Nb 2 O 5 , CeO 2 , V 2 O 5 , A 1 2 O 3 , Ag 2 O and mixtures thereof.

9. The paste composition of claim 1 , said lead-tellurium-lithium-titanium-oxide further comprising oxides of one or more elements selected from the group consisting of Si, Sn, B, Ag, Na, K, Rb, Cs, Ge, Ga, In, Ni, Zn, Ca, Mg, Sr, Ba, Se, Mo, W, Y, As, La, Nd, Bi, Ta, V, Fe, Hf, Cr, Cd, Sb, Zr, Mn, P, Cu, Lu, Ce, Al and Nb.

10. The paste composition of claim 1 , wherein said lead-tellurium-lithium-titanium oxide is in the form of a glass frit.

11. A semiconductor device comprising an electrode formed from the paste composition of any of claims 1 - 10 , wherein said paste composition has been fired to remove the organic medium and form said electrode.

12. A solar cell comprising an electrode formed from the paste composition of any of claims 1 - 10 , wherein said paste composition has been fired to remove the organic medium and form said electrode.

13. The solar cell of claim 12 , wherein said electrode is a tabbing electrode on the back side of said solar cell.