High frequency oscillator circuit and method to operate same
View Patent ↗A method includes providing an oscillator having a field effect transistor connected with a resonant circuit. The field effect transistor has a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The method further includes biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency f 0 . There can be an additional step of varying the gate voltage so as to bias the graphene channel into the negative differential resistance region of operation and out of the negative differential resistance region of operation so as to turn on the frequency signal and to turn off the frequency signal, respectively.
1. A method comprising:
providing an oscillator comprised of a field effect transistor connected with a resonant circuit, the field effect transistor comprising a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto;
biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency f 0 ;
where the resonant circuit is coupled to a radiator for radiating the frequency signal when the frequency signal is turned on; and controllinig the output power from the radiator using a voltage applied to the gate electrode.
2. The method of claim 1 , where the resonant circuit has a first terminal connected to the field effect transistor, the resonant circuit comprising an inductance and a capacitance and having a second terminal for connecting to the radiator, where the resonant frequency is a frequency in a range of Terahertz frequencies.
3. The method of claim 1 , where the source of gate voltage provides a variable gate voltage and further comprising changing the gate voltage to turn the oscillator on and off.
4. The method of claim 1 , further comprising varying the gate voltage so as to bias the grapheme channel into the negative differential resistance region of operation and out of the negative differential resistance region of operation so as to turn on the frequency signal and to turn off the frequency signal, respectively.
5. The method of as in claim 1 , wherein fabricating the oscillator comprises providing a dielectric layer disposed between the graphene channel and the gate electrode.
6. The method as in claim 5 , where the dielectric layer is comprised of a material having a dielectric constant that is greater than the dielectric constant of silicon nitride.
7. The method as in claim 1 , where the graphene channel is fabricated so as to be disposed over a surface of a substrate in electrical contact with the source electrode and the drain electrode, and where the gate electrode is fabricated so as to he disposed over the surface of the substrate.
8. The method as in claim 1 , where the graphene channel is fabricated so as to be disposed over a surface of a substrate in electrical contact with the source electrode and the drain electrode, and where the gate electrode is fabricated so as to be disposed beneath the surface the substrate.
9. The method of claim 1 , where the resonant circuit has a first terminal connected to the field effect transistor, the resonant circuit comprising an inductance and a capacitance and having a second terminal for connecting to the radiator.
10. The method of claim 9 , where the first terminal of the resonant circuit is connected to the drain electrode, and where the source electrode is connected to a source of the bias voltage.
11. The method of claim 9 , where the inductance and the capacitance are connected in parallel.
12. The method of claim 9 , where the inductance and the capacitance are connected in series.
13. The method of claim 1 , where when the graphene channel is biased by the gate electrode into the negative differential resistance region of operation the resonant frequency f 0 is a frequency in a range of Terahertz frequencies.
14. The method of claim 1 , where when the graphene channel is biased by the gate electrode into the negative differential resistance region of operation there is a step of varying a variable gate voltage so as to turn the frequency signal on and off.
15. The method of claim 1 , where when the graphene channel is biased by the gate electrode into the negative differential resistance region of operation the resonant frequency f 0 of the oscillator is determined by the inductance (L 1 ) and the capacitance (C 1 ) and is given by f 0 = 1 /(2π*sqrt(L 1 *C 1 )).
16. A method comprising:
providing an oscillator comprised of a field effect transistor connected with a resonant circuit, the field effect transistor comprising a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto;
biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency f 0 ;
varying the gate voltage so as to bias the graphene channel into the negative differential resistance region of operation and out of the negative differential resistance region of operation so as to turn on the frequency signal and to turn off the frequency signal, respectively;
where the resonant circuit is coupled to a radiator for radiating the frequency signal when the frequency signal is turned on; and
controlling output power from the radiator using a voltage applied to gate electrode.
17. A method comprising:
providing an oscillator comprised of a field effect transistor connected with a resonant circuit, the field effect transistor comprising a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto;
biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having, a resonant frequency f 0 ;
where the resonant circuit is coupled to a radiator for radiating the frequency signal when the frequency signal turned on; and
where the resonant circuit has a first terminal connected to the field effect transistor and a second terminal for connecting to the radiator, the resonant circuit comprising an inductance and a capacitance connected in series between the first terminal and the second terminal.
18. The method of claim 17 , further comprising controlling output power from the radiator using a voltage applied to the gate electrode.