Semiconductor device and electric power conversion system using the same
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
1. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces are sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed on a part of an inner wall of the trenches;
a first interlayer insulating layer disposed on a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer, at least a part thereof facing the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer, at least a part thereof covering at least a part of a surface of the second conductive layer;
a third conductive layer, at least a part thereof being formed on surfaces of the third semiconductor layer and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the third semiconductor layer covers a circumference of side-wall of the first conductive layer.
2. The semiconductor device according to claim 1 ,
wherein the contacting part covers a side-wall of the first conductive layer.
3. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces are sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type selectively formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed along a part of an inner wall of the trenches;
a first interlayer insulating layer disposed along a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer at least a part thereof facing to the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer at least a part thereof covering at least a part of a surface of the second conductive layer;
a third interlayer insulating layer at least a part thereof covering at least a part of the surface of the first conductive layer;
a third conductive layer at least a part thereof formed on surfaces of the third semiconductor layer and the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein at least a part of the first conductive layer covers at least a part of the second interlayer insulating layer,
at least a part of the third conductive layer covers at least a part of the third interlayer insulating layer,
a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the third semiconductor layer covers a circumference of side-wall of the first conductive layer.
4. The semiconductor device according to claim 3 ,
wherein the contacting part covers a side-wall of the first conductive layer.
5. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed on a part of an inner wall of the trenches;
a first interlayer insulating layer disposed on a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer, at least a part thereof facing the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer, at least a part thereof covering at least a part of a surface of the second conductive layer;
a third conductive layer, at least a part thereof being formed on surfaces of the third semiconductor layer and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the adjacent trenches are connected together to communicate each other to have a loop trench shape in a horizontal planar view.
6. The semiconductor device according to claim 5 ,
wherein the adjacent trenches having the loop trench shape are connected in a ladder shape in a horizontal planar view.
7. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type selectively formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed along a part of an inner wall of the trenches;
a first interlayer insulating layer disposed along a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer at least a part thereof facing to the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer at least a part thereof covering at least a part of a surface of the second conductive layer;
a third interlayer insulating layer at least a part thereof covering at least a part of the surface of the first conductive layer;
a third conductive layer at least a part thereof formed on surfaces of the third semiconductor layer and the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein at least a part of the first conductive layer covers at least a part of the second interlayer insulating layer,
at least a part of the third conductive layer covers at least a part of the third interlayer insulating layer,
a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the adjacent trenches are connected together to communicate each other to have a loop trench shape in a horizontal planar view.
8. The semiconductor device according to claim 7 ,
wherein the adjacent trenches having the loop trench shape are connected in a ladder shape in a horizontal planar view.
9. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed on a part of an inner wall of the trenches;
a first interlayer insulating layer disposed on a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer, at least a part thereof facing the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer, at least a part thereof covering at least a part of a surface of the second conductive layer;
a third conductive layer, at least a part thereof being formed on surfaces of the third semiconductor layer and the fourth semiconductor layer and electrically connected to the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the adjacent trenches having the loop trench shape are connected to have a zigzag trench in the horizontal planar view.
10. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type formed on one of surfaces of the first semiconductor layer;
trenches formed on the other surface of the first semiconductor layer opposite to the second semiconductor layer;
a semiconductor protruding part whose side surfaces sandwiched between the trenches and formed on a rest of the surface of the first semiconductor layer other than the surface on which the trenches are formed;
a third semiconductor layer of the second conductivity type selectively formed on a surface of the semiconductor protruding part at a predetermined location;
a fourth semiconductor layer of the first conductivity type partially formed on a surface of the third semiconductor layer and having a higher impurity concentration than the first semiconductor layer;
a gate insulating layer disposed along a part of an inner wall of the trenches;
a first interlayer insulating layer disposed along a rest of the inner wall of the trenches other than the inner wall on which the gate insulating layer is disposed;
a first conductive layer at least a part thereof facing to the fourth semiconductor layer via the gate insulating layer;
a second conductive layer formed on a surface of the first interlayer insulating layer;
a second interlayer insulating layer at least a part thereof covering at least a part of a surface of the second conductive layer;
a third interlayer insulating layer at least a part thereof covering at least a part of the surface of the first conductive layer;
a third conductive layer at least a part thereof formed on surfaces of the third semiconductor layer and the fourth semiconductor layer;
a contacting part electrically connecting the third conductive layer and the third semiconductor layer;
a fourth conductive layer formed on a surface of the second semiconductor layer,
wherein at least a part of the first conductive layer covers at least a part of the second interlayer insulating layer,
at least a part of the third conductive layer covers at least a part of the third interlayer insulating layer,
a part of the surface of the semiconductor protruding part includes a part of the first semiconductor layer; and
wherein the adjacent trenches having the loop trench shape are connected to have a zigzag trench in the horizontal planar view.