IP Library Granted Patent US 9,160,298
Granted Patent B2
US 9,160,298 · App. 13/559,151 · Granted Oct 13, 2015

Acoustic wave device

Inventor: Tsuyoshi Yokoyama (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H03H9/02015H01L41/187H03H9/173
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Quick Facts
Patent No.
US 9,160,298
App. No.
13/559,151
Granted
Oct 13, 2015
Kind
B2
Abstract

An acoustic wave device includes: a substrate; a lower electrode that is located on the substrate; a piezoelectric film that is located on the lower electrode and made of aluminum nitride of which a ratio of a lattice constant in a c-axis direction to a lattice constant in an a-axis direction is smaller than 1.6; and an upper electrode that is located on the piezoelectric film and faces the lower electrode across the piezoelectric film.

Claims (16)

1. An acoustic wave device, comprising:

a substrate;

a lower electrode that is located on the substrate;

a piezoelectric film that is located on the lower electrode and made of aluminum nitride of which a ratio of a lattice constant in a c-axis direction to a lattice constant in an a-axis direction is smaller than 1.6; and

an upper electrode that is located on the piezoelectric film and faces the lower electrode across the piezoelectric film,

wherein the piezoelectric film is made of aluminum nitride to which at least one of titanium, zirconium and hafnium is added.

2. The acoustic wave device according to claim 1 , wherein a temperature compensation film is inserted into the piezoelectric film.

3. The acoustic wave device according to claim 2 , wherein the temperature compensation film includes silicon oxide.

4. An acoustic wave device, comprising:

a substrate;

a lower electrode that is located on the substrate;

a piezoelectric film that is located on the lower electrode and made of aluminum nitride of which a lattice constant in a c-axis direction is smaller than 0.498 nm; and

an upper electrode that is located on the piezoelectric film and faces the lower electrode across the piezoelectric film,

wherein the piezoelectric film is made of aluminum nitride to which at least one of titanium, zirconium and hafnium is added.

5. The acoustic wave device according to claim 4 , wherein a temperature compensation film is inserted into the piezoelectric film.

6. The acoustic wave device according to claim 5 , wherein the temperature compensation film includes silicon oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2012
From: YOKOYAMA, TSUYOSHI
To: TAIYO YUDEN CO., LTD.
Reel/Frame 028650/0036 →
Priority Claims (1)
JP 2011-180819 · Aug 22, 2011 · national
Continuity (1)
Related Publication 20130049544A1 · Feb 28, 2013