Source and drain doping profile control employing carbon-doped semiconductor material
Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.
1. A semiconductor structure including a field effect transistor (FET), said semiconductor structure comprising:
an underlying source/drain region;
a carbon-doped semiconductor material portion located on a surface of a portion of said underlying source/drain region; and
a raised source/drain region in contact with a surface of said carbon-doped semiconductor material portion and in contact with a surface of another portion of said underlying source/drain region,
wherein a first interface between said another portion of said underlying source/drain region and said raised source/drain region is spaced from a gate electrode of said field effect transistor by a lesser lateral distance than a second interface between said portion of said underlying source/drain region and said carbon-doped semiconductor material portion.
2. The semiconductor structure of claim 1 , wherein said portion of said underlying source/drain region that underlies said first interface has a greater thickness than said another portion of said underlying source/drain region that underlies said second interface.
3. The semiconductor structure of claim 1 , further comprising a metal semiconductor alloy portion in contact with said raised source/drain region and said carbon-doped semiconductor material portion.
4. The semiconductor structure of claim 1 , wherein a bottom surface of said carbon-doped semiconductor material portion is coplanar with a top surface of said portion of said underlying source/drain region.
5. The semiconductor structure of claim 1 , wherein the carbon-doped semiconductor material comprises an epitaxial alloy of a semiconductor material and carbon.
6. The semiconductor structure of claim 5 , wherein the semiconductor material in the epitaxial alloy comprises silicon, germanium, or a compound semiconductor material.