Memory device for managing timing parameters
A method of performing write operations in a memory device including a plurality of bank is performed. Each bank includes two or more sub-banks including at least a first sub-bank and a second sub-bank. The method comprises: performing a first row cycle for writing to a first word line of the first sub-bank, the first row cycle including a plurality of first sub-periods, each sub-period for performing a particular action; and performing a second row cycle for writing to a first word line of the second sub-bank, the second row cycle including a plurality of second sub-periods of the same type as the plurality of first sub-periods. The first row cycle overlaps with the second row cycle, and a first type sub-period of the first sub-periods overlaps with a second type sub-period of the second sub-periods, the first type and second type being different types.
1. A method of performing write operations in a memory device including a plurality of banks in which a plurality of memory cells are arranged, each bank including two or more sub-banks including at least a first sub-bank and a second sub-bank, the method comprising:
performing a first row cycle for writing to a first word line of the first sub-bank, the first row cycle including a plurality of first sub-periods, each sub-period for performing a particular action; and
performing a second row cycle for writing to a first word line of the second sub-bank, the second row cycle including a plurality of second sub-periods of the same type as the plurality of first sub-periods;
wherein the first row cycle overlaps with the second row cycle, and a first type sub-period of the first sub-periods overlaps with a second type sub-period of the second sub-periods, the first type and second type being different types.
2. The method of claim 1 , wherein the first type sub-period of the first sub-periods also overlaps with a first type sub-period of the second sub-periods, the first types being the same type.
3. The method of claim 2 , wherein the first type sub-period is a data write operation time period, and the second type sub-period is a word line enable time period or a precharge time period.
4. The method of claim 2 , wherein the first type sub-period is a word line enable time period, and the second type sub-period is a precharge time period.
5. The method of claim 2 , wherein the first type sub-period is a precharge time period, and the second type sub-period is a word line enable time period.
6. The method of claim 1 , wherein the first type sub-period is a word line enable time period, and the second type sub-period is a precharge time period.
7. The method of claim 1 , wherein a row cycle start time for the first row cycle is a different time from a row cycle start time for the second row cycle.
8. The method of claim 7 , wherein a row cycle end time for the first row cycle is a different time from a row cycle end time for the second row cycle, and the time between the row cycle start time and row cycle end time for the first row cycle is the same as the time between the row cycle start time and row cycle end time for the second row cycle.
9. The method of claim 7 , wherein a difference between the row cycle start time for the first row cycle and the row cycle start time for the second row cycle is between 5% and 25% of the difference between the row cycle start time for the first row cycle and the row cycle end time for the first row cycle.
10. The method of claim 1 , further comprising a plurality of additional row cycles for writing to the first sub-bank and a plurality of additional row cycles for writing to the second sub-bank, wherein starts of the row cycles between the first sub-bank and second sub-bank are staggered.
11. A method of performing write operations in a memory device including a plurality of banks in which a plurality of memory cells are arranged, each bank including two or more sub-banks including at least a first sub-bank and a second sub-bank, the method comprising:
performing a first cycle for a first word line of a first sub-bank of a memory bank for writing to the first word line of the first sub-bank, the first cycle including a word line enable time period, a data write operation time period, and a precharge time period; and
performing a second cycle for a first word line of a second sub-bank of the memory bank for writing to the first word line of the second sub-bank, the second cycle including a word line enable time period, a data write operation time period, and a precharge time period;
wherein the first cycle overlaps with the second cycle, and the data write operation time period of the first cycle overlaps with at least one of the word line enable time period and the precharge time period of the second cycle.
12. The method of claim 11 , wherein the data write operation time period of the first cycle also overlaps with the data write operation time period of the second cycle.
13. The method of claim 12 , wherein the word line enable time period of the first cycle overlaps with the precharge time period of the second cycle.
14. The method of claim 12 , wherein the precharge time period of the first cycle overlaps with the precharge time period of the second cycle.
15. The method of claim 12 , wherein the word line enable time period of the first cycle overlaps with the word line enable time period of the second cycle.
16. A controller for controlling write operations in a memory device including a plurality of banks in which a plurality of memory cells are arranged, each bank including two or more sub-banks including at least a first sub-bank and a second sub-bank, the controller configured to implement a method comprising:
performing a first row cycle for writing to a first word line of the first sub-bank, the first row cycle including a plurality of first sub-periods, each sub-period for performing a particular action; and
performing a second row cycle for writing to a first word line of the second sub-bank, the second row cycle including a plurality of second sub-periods of the same type as the plurality of first sub-periods;
wherein the first row cycle overlaps with the second row cycle, and a first type sub-period of the first sub-periods overlaps with a second type sub-period of the second sub-periods, the first type and second type being different types.
17. The controller of claim 16 , wherein first type sub-period of the first sub-periods also overlaps with a first type sub-period of the second sub-periods, the first types being the same type.
18. The controller of claim 17 , wherein the first type sub-period is a data write operation time period, and the second type sub-period is a word line enable time period or a precharge time period.
19. The controller of claim 16 , wherein a row cycle start time for the first row cycle is a different time from a row cycle start time for the second row cycle.
20. The controller of claim 19 , wherein a row cycle end time for the first row cycle is a different time from a row cycle end time for the second row cycle, and the time between the row cycle start time and row cycle end time for the first row cycle is the same as the time between the row cycle start time and row cycle end time for the second row cycle.